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Document overview
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Technical content
BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 D o c u m e n t n u m b e r : B L / S S M T C 0 0 8 w w w . g a l a x y c n . c o m R e v . A 1
FEATURES
z High Density Cell Design For Low RDS(ON)。 z Voltage Controlled Small Switch. z Rugged and Reliable. z High Saturation Current Capability.
APPLICATIONS
z N-channel enhancement m ode effect transistor. z S w i t c h i n g a p p l i c a t i o n . SOT-23
ORDERING INFORMATION
Type No. Marking Package Code 2N7002 3P SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage 60 V VDGR Drain-Gate voltage(RGS≤1MΩ) 60 V VGSS Gate -Source voltage - continuous - N o n R e p e t i t i v e ( tp<50μs) ±20 ±40 V ID Maximum Drain current -continuous - P u l s e d 115 800 mA PD Power Dissipation 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Pb Lead-free
BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 D o c u m e n t n u m b e r : B L / S S M T C 0 0 8 w w w . g a l a x y c n . c o m R e v . A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=10μA 60 Gate Threshold Voltage V GS(th) VDS=VGS, ID=250μA 1 2.1 2.5 V Gate-body Leakage Forward R e v e r s e IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 nA VDS=60V, VGS=0V 1 Zero Gate Voltage Drain Current I DSS VDS=60V,VGS=0V,Tj=125℃ 500 μA On-state Drain Current I D(On) VGS=10V, VDS≥2.0VDS(ON) 500 2700 mA Drain-Source on-voltage V DS(ON) VGS=10V,ID=500mA VGS=5V,ID=50mA 0.6 0.09 3.75 1.5 V Forward transconductance g FS VDS≥2.0VDS(ON),ID=200mA 80 320 mS Static drain-Source on-resistance R DS(ON) VGS=10V,ID=500mA VGS=10V,ID=500mA,Tj=100℃ VGS=5.0V,ID=50mA VGS=5.0V,ID=50mA, Tj=100℃ 1.2 1.7 1.7 2.4 7.5 13.5 7.5 13.5 Ω Drain-Source diode forward voltage VSD VGS=0V,ID=115mA 0.88 1.5 V Input capacitance C ISS 20 50 Output capacitance C OSS 11 25 Reverse transfer capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz 4 5 pF Turn-On Delay Time t D(ON) 20 ns Turn-Off Delay Time t D(OFF) VDD = 30V, ID= 0.2A, RL = 150Ω, VGS= 10V, RGEN= 25Ω 20 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 D o c u m e n t n u m b e r : B L / S S M T C 0 0 8 w w w . g a l a x y c n . c o m R e v . A 3
BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 D o c u m e n t n u m b e r : B L / S S M T C 0 0 8 w w w . g a l a x y c n . c o m R e v . A 4 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J 0.1Typical K 2.35 2.45 All Dimensions in mm Device Package Shipping 2N7002 SOT-23 3000/Tape&Reel