2N7002MTF FAIRCHILD

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA 115 800 ±20 0.2 0.16 - 55 to +150 62.5-- ! Lower R DS(on) ! Improved Inductive Ruggedness ! Fast Switching Times ! Lower Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability Advanced Small Signal MOSFET Thermal Resistance Junction-to-AmbientRθJA ℃/W Characteristic Max. UnitsSymbol Typ.

FEATURES

Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed ① Gate-to-Source Voltage Total Power Dissipation (T C=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Characteristic Value UnitsSymbol IDM VGS ID PD TJ , TSTG mA V W W/℃ mA VDSS V SOT-23 1.Gate 2. Source 3. Drain Rev. A1 Product Summary Part Number BVDSS RDS(on) I D 2N7002 60V 5.0Ω 115mA

Electrical Characteristics (TC=25℃ unless otherwise specified) CharacteristicSymbol Max. Units Typ.Min. Test Condition 2N7002MTF BVDSS VGS(th) IGSS IDSS ID(ON) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage, Forward Gate-Source Leakage, Reverse Drain-to-Source Leakage Current On-State Drain-Source Current Static Drain-Source On-State Resistance ② Forward Transconductance ② Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1.0 0.5 0.08 2.5 100 -100 1.0 500 5.0 V V nA µA A Ω S pF ns VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VGS = 20V VGS = -20V VGS = 40V VGS = 40V, TC = 125℃ VDS = 10V, VGS = 10V VGS = 10V, ID = 0.5A VDS = 15V, ID = 0.2A VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A RG = 25Ω Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ③ Essentially Independent of Operating Temperature Source-Drain Diode Ratings and Characteristics CharacteristicSymbol Max. Units Typ.Min. Test Condition IS ISD VSD Continuous Source Current Pulse Source Current ① Diode Forward Voltage ② 115 800 1.5 mA mA V Integral reverse pn-diode In the MOSFET TA = 25 ℃, IS = 115mA VGS = 0V

Small Signal MOSFET 2N7002MTF

Small Signal MOSFET2N7002MTF