2N7002 ZETEX

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996

FEATURES

  • 60 Volt V CEO PARTMARKING DETAIL – 702 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C I D 115 mA Pulsed Drain Current I DM 800 mA Gate-Source Voltage V GS ± 40 V Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BV DSS 60 V ID=10µ A, V GS=0V Gate-Source Threshold Voltage VGS(th) 12 . 5 V I D=250mA, V DS= VGS Gate-Body Leakage I GSS 10 nA VGS=± 20V, V DS=0V Zero Gate Voltage Drain Current IDSS 1 500 µA µA VDS=48V, V GS=0V VDS=48V, V GS=0V, T=125°C (2) On-State Drain Current(1) I D(on) 500 mA V DS=25V, V GS=10V Static Drain-Source On-State Voltage (1) VDS(on) 3.75 375 V mV VGS=10V, I D=500mA VGS=5V, I D=50mA Static Drain-Source On-State Resistance (1) RDS(on) 7.5 7.5 Ω Ω VGS=10V, I D=500mA VGS=5V, I D=50mA Forward Transconductance (1)(2) gfs 80 mS V DS=25V, I D=500mA Input Capacitance (2) C iss 50 pF Common Source Output Capacitance (2) Coss 25 pF V DS=25V, V GS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 5p F Turn-On Time (2)(3) t (on) 20 ns VDD ≈30V, I D=200mA Rg=25Ω , R L=150 ΩTurn-Off Time (2)(3) t (off) 20 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 2N7002 D G S SOT23 3 - 2