2N7002 INFINEON

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 9

Technical content

Features

  • N-channel
  • Enhancement mode
  • Logic level
  • Avalanche rated
  • fast switching
  • Pb-free lead-plating; RoHS compliant
  • Qualified according to JEDEC (1) for target applications
  • Halogen-free according to IEC61249-2-21 Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.30 A T A=70 °C 0.24 Pulsed drain current I D,pulse T A=25 °C 1.2 Avalanche energy, single pulse E AS I D=0.3 A, R GS=25 Ω 1.3 mJ Reverse diode dv /dt dv /dt I D=0.3 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD class JESD22-A114 (HBM) class 0 (<250V) Power dissipation P tot Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 (1) J-STD20 and JESD22 Value PG-SOT23 Type Package Tape and Reel Information Marking HalogenFree Packing 2N7002 PG-SOT-23 H6327: 3000 pcs/reel 72s Yes Non Dry V DS 60 V R DS(on),max V GS=10 V 3 Ω V GS=4.5 V 4 I D 0.3 A Product Summary Rev. 2.3 page 1 2010-08-26

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint(2) R thJA - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D=250 µA 60 - - V Gate threshold voltage V GS(th) V DS=VGS , I D=250 µA 1.5 2.1 2.5 Drain-source leakage current I D (off) V DS=60 V, V GS=0 V, T j=25 °C - - 0.1 µA V DS=60 V, V GS=0 V, T j=150 °C --5 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 10 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.25 A - 2.0 4 Ω V GS=10 V, I D=0.5 A - 1.6 3 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.24 A 0.2 0.36 - S Values (2) Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70µm thick and 20mm long. Rev. 2.3 page 2 2010-08-26

Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss -1 3 2 0 p F Output capacitance C oss - 4.1 6 Reverse transfer capacitance Crss - 2.0 3 Turn-on delay time t d(on) - 3.0 4.5 ns Rise time t r - 3.3 5 Turn-off delay time t d(off) - 5.5 9 Fall time t f - 3.1 5 Gate Charge Characteristics Gate to source charge Q gs - 0.05 0.1 nC Gate to drain charge Q gd - 0.2 0.4 Gate charge total Q g - 0.4 0.6 Gate plateau voltage V plateau - 4.0 - V Reverse Diode Diode continous forward current I S - - 0.3 A Diode pulse current I S,pulse - - 1.2 Diode forward voltage V SD V GS=0 V, I F=0.5 A, T j=25 °C - 0.96 1.2 V Reverse recovery time t rr - 8.5 13 ns Reverse recovery charge Q rr - 2.4 4 nC V R=30 V, I F=0.5 A, di F/dt =100 A/µs T A=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=0.5 A, R G=6 Ω V DD=48 V, I D=0.5 A, V GS=0 to 10 V Rev. 2.3 page 3 2010-08-26

1 Power dissipation 2 Drain current

P tot=f(T A) I D=f(T A); V GS≥10 V 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 1 µs 10 µs 100 µs 1 ms 10 ms DC 101 100 10-1 10-2 10-3 1 10 100 V DS [V] I D [A] limited by on-state resistance single pulse 0.01 0.02 0.050.1 0.2 0.5 10310210110010-110-210-310-410-5 103 102 101 100 t p [s] Z thJA [K/W] 0.1 0.2 0.3 0.4 0.5 0 40 80 120 160 T A [°C] P tot [W] 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 40 80 120 160 T A [°C] I D [A] Rev. 2.3 page 4 2010-08-26

5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 2.9 V 3.2 V 3.5 V 4 V 4.5 V 5 V 7 V 10 V I D [A] R DS(on) [Ω] 0.1 0.2 0.3 0.4 0.5 0.6 012345 V GS [V] I D [A] 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 I D [A] g fs [S] 2.9 V 3.2 V 3.5 V 4 V 4.5 V 5 V 7 V 10 V 0.1 0.2 0.3 0.4 0.5 0.6 012345 V DS [V] I D [A] Rev. 2.3 page 5 2010-08-26

9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.3 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=250 µA parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j typ 98 % 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -60 -20 20 60 100 140 T j [°C] R DS(on) [Ω] typ 98 % 2 % 0.4 0.8 1.2 1.6 2.4 2.8 3.2 -60 -20 20 60 100 140 T j [°C] V GS(th) [V] Ciss Coss Crss 102 101 100 01 0 2 0 3 0 V DS [V] C [pF] 25 °C 150 °C 25 °C, 98% 150 °C, 98% 10-3 10-2 10-1 100 101 0 0.4 0.8 1.2 1.6 V SD [V] I F [A] Rev. 2.3 page 6 2010-08-26

13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 Ω V GS=f(Q gate); I D=0.5 A pulsed parameter: Tj(start) parameter: V DD

15 Drain-source breakdown voltage

V BR(DSS)=f(T j); I D=250 µA -40 0 40 80 120 160 T j [°C] V BR(DSS) [V] 12 V 30 V 48 V Q gate [nC] V GS [V] 25 °C 100 °C 125 °C 103102101100 100 10-1 10-2 10-3 t AV [µs] I AV [A] Rev. 2.3 page 7 2010-08-26

Package Outline: Footprint: Packing: Dimensions in mm Rev. 2.3 page 8 2010-08-26

81726 Munich, Germany

© 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 9 2010-08-26