Download PDF2N7002 GE
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
FEATURES
DMOS Transistors (N-Channel) Dimensions in inches and (millimeters) .016 (0.4) .056 (1.43) max. .004 (0.1) .122 (3.1) Top View .102 (2.6) .007 (0.175) .045 (1.15) .118 (3.0) .052 (1.33) .005 (0.125) .094 (2.4) .037 (0.95) Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Pin configuration 1 = Gate, 2 = Source, 3 = Drain SOT -23 2N7002 Marking S72 Inverse Diode Symbol Value Unit Drain-Source Voltage V DSS 60 V Drain-Gate Voltage V DGS 60 V Gate-Source-Voltage (pulsed) V GS ±20 V Drain Current (continuous) I D 250 mA Power Dissipation at TC = 50 °C P tot 0.3101) W Junction Temperature T j 150 °C Storage T emperature Range T S –55 to +150 °C 1) Ceramic Substrate 0.7mm; 2.5 cm2 area. Symbol Value Unit Max. Forward Current (continuous) at Tamb = 25 °C IF 0.3 A Forward Voltage Drop (typ.) at VGS = 0, IF = 0.3 A, Tj = 25 °C VF 0.85 V ♦ High input impedance ♦ High-speed switching ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No minority carrier storage time ♦ CMOS logic compatible input ♦ No thermal runaway ♦ No secondary breakdown
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified 2N7002 Symbol Min. T yp. Max. Unit Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V (BR)DSS 60 90 – V Gate Threshold Voltage at VGS = VDS , ID = 1 mA V GS(th) –22 . 5 V Gate-Body Leakage Current at VGS = 15 V , VDS = 0 I GSS ––1 0 n A Drain Cutoff Current at VDS = 25 V , VGS = 0 I DSS ––0 . 5 µA Drain-Source ON Resistance at VGS = 10 V , ID = 500 mA r DS(ON) –57 . 5 Ω Thermal Resistance Junction to Substrate Backside R thSB – – 320 1) K/W Thermal Resistance Junction to Ambient Air RthJA – – 450 1) K/W Forward Transconductance at VDS = 10 V , ID = 200 mA, f = 1 MHz gm – 200 – mS Input Capacitance at VDS = 10 V , VGS = 0, f = 1 MHz C iss –6 0 –p F Switching Times at VGS = 10 V , VDS = 10 V , RD = 100 Ω Tu r n - O n T i m e T urn-Off Time ton toff ns ns 1) Device on fiberglass substrate, see layout Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12)
RATINGS AND CHARACTERISTIC CURVES 2N7002
RATINGS AND CHARACTERISTIC CURVES 2N7002
RATINGS AND CHARACTERISTIC CURVES 2N7002