2N7002

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

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Document number: DS11303 Rev. 40 - 2 1 of 5 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS RDS(ON) Max ID Max TA = +25°C 60V 5Ω @ VGS = 10V 210mA 7.5Ω @ VGS = 5V 170mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

  • Motor controls
  • Power-management functions Features and Benefits
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface-Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (2N7002Q) Mechanical Data
  • Package: SOT23
  • Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ Matte Tin Plated Leads. Solderable per MIL- STD-202, Method 208
  • Terminal Connections: See Diagram
  • Weight: 0.009 grams (Approximate) Ordering Information (Note 4) Part Number Package Packing Qty. Carrier 2N7002-7-F SOT23 (Standard) 3,000 Tape & Reel 2N7002-13-F SOT23 (Standard) 10,000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2002 - 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Code N - L M N P R S T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT23 (Standard) Top View Equivalent Circuit Top View D G S K72 = Product Type Marking Code YM = Date Code Marking Y or Y or Y = Year (ex: L = 2024) M or M = Month (ex: 9 = September) Source Gate Drain K72 YM

Document number: DS11303 Rev. 40 - 2 2 of 5 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS  1.0MΩ VDGR 60 V Gate-Source Voltage Continuous Pulsed (Note 8) VGSS ±20 ±40 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +85°C TA = +100°C ID 170 120 105 mA Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +85°C TA = +100°C ID 210 150 135 mA Maximum Continuous Body Diode Forward Current (Note 6) Continuous Pulsed (Note 8) IS 0.2 0.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 800 mA Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 370 mW (Note 6) 540 Thermal Resistance, Junction to Ambient (Note 5) RθJA 348 °C/W (Note 6) 241 Thermal Resistance, Junction to Case (Note 6) RθJC 91 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current @ TJ = +25°C @ TJ = +125°C IDSS ⎯ 1.0 500 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.0 ⎯ 2.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance @ TJ = +25°C @ TJ = +25°C @ TJ = +125°C RDS(ON) 3.2 2.4 4.4 7.5 5.0 13.5 Ω VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A On-State Drain Current ID(ON) 0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V Forward Transconductance gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.2A Diode Forward Voltage VSD ⎯ 0.78 1.5 V VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 22 50 pF VDS = 25V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 11 25 pF Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF Gate Resistance Rg ⎯ 120 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg ⎯ 223 ⎯ pC VDS = 10V, ID = 250mA Gate-Source Charge Qgs ⎯ 82 ⎯ Gate-Drain Charge Qgd ⎯ 178 ⎯ Turn-On Delay Time tD(ON) ⎯ 2.8 ⎯ ns VDD = 30V, ID = 0.2A RL = 150Ω, VGEN = 10V RGEN = 25Ω Turn-On Rise Time tR ⎯ 3.0 ⎯ Turn-Off Delay Time tD(OFF) ⎯ 7.6 ⎯ Turn-Off Fall Time tF ⎯ 5.6 ⎯ Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing.

Document number: DS11303 Rev. 40 - 2 3 of 5 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics DS I , DRAIN-SOURCE CURRENT (A)D 0 0.2 I , DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current D 0.4 0.6 0.8 1.0 R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ( ) DS(ON) 1.0 1.5 2.0 2.5 3.0 -55 -30 -5 20 45 70 95 120 145 T , JUNCTION TEMPERATURE ( C) Fig. 3 On-Resistance vs. Junction Temperature j ° V = 10V, I = 200mA GS D R , STATIC DRAIN-SOURCE ON-RESISTANCE ( ) DS(ON) V , GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage GS I = 50mAD I = 500mAD 0 2 4 6 8 10 12 14 16 18 R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ( ) DS(ON) 0 0.2 0.4 0.6 0.8 1 V GATE SOURCE CURRENT (V)GS, I , DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics D 100 150 200 250 300 350 0 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)d T , AMBIENT TEMPERATURE ( C) Fig. 6 Max Power Dissipation vs. Ambient Temperature A ° 400

Document number: DS11303 Rev. 40 - 2 4 of 5 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Standard) A A2 L GAUGE PLANE 0.25 D L1b E E1 e e1F a c SOT23 (Standard) Dim Min Max Typ A 0.90 1.15 1.025 A1 0.00 0.10 0.05 A2 0.85 1.10 0.975 b 0.30 0.51 0.40 c 0.080 0.202 0.11 D 2.80 3.00 2.90 E 2.25 2.55 2.40 E1 1.20 1.40 1.30 e 0.89 1.03 0.915 e1 1.78 2.05 1.83 F 0.40 0.60 0.535 L1 0.45 0.61 0.55 L 0.25 0.55 0.40 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Standard) X Y Y1 C Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9

Document number: DS11303 Rev. 40 - 2 5 of 5 www.diodes.com July 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 2N7002 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. 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