2N7000 NSC

Document overview

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Technical content

Features

Y Efficient high density cell design approaching (3 million/in Y Voltage controlled small signal switch Y Rugged Y High saturation current Y Low R DS (ON) TL/G/11378–1 TO-92

7000 Series

TL/G/11378–2 TO-236 AB (SOT-23)

7002 Series

TL/G/11378–3 Absolute Maximum Ratings Symbol Parameter 2N7000 2N7002 NDF7000A NDS7002A Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (R GS s 1M X)6 0 V VGSS Gate-Source Voltage g40 V ID Drain CurrentÐContinuous 200 115 400 280 mA ÐPulsed 500 800 2000 1500 mA PD Total Power Dissipation @ TA e 25§C 400 200 625 300 mW Derating above 25 §C 3.2 1.6 5 2.4 mW/ §C TJ,T STG Operating and Storage Temperature Range b55 to 150 b65 to 150 §C TL Maximum Lead Temperature for Soldering 300 §CPurposes, (/16* from Case for 10 Seconds C1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Electrical Characteristics TC e 25§C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage V GS e 0V, I D e 10 mA6 0 V IDSS Zero Gate Voltage Drain Current V DS e 48V, V GS e 0V 1 mA TC e 125§C1 m A IGSSF Gate-Body Leakage, Forward V GS eb 15V, V DS e 0V b10 nA ON CHARACTERISTICS * VGS(th) Gate Threshold Voltage V DS e VGS,I D e 1 mA 0.8 2.1 3 V rDS(ON) Static Drain-Source V GS e 10V, I D e 0.5A 1.2 5 X On-Resistance TC e 125§C 1.9 9 X VDS(ON) Drain-Source On-Voltage V GS e 10V, I D e 0.5A 0.6 2.5 V VGS e 4.5V, I D e 75 mA 0.14 0.4 V ID(ON) On-State Drain Current V GS e 4.5V, V DS e 10V 75 600 mA gFS Forward Transconductance V DS e 10V, I D e 200 mA 100 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance V DS e 25V, V GS e 0V, f e 1.0 MHz 20 60 pF Coss Output Capacitance 11 25 pF Crss Reverse Transfer Capacitance 4 5 pF SWITCHING CHARACTERISTICS * ton Turn-On Time V DD e 15V, I D e 0.5V, V GS e 10V, 10 ns toff Turn-Off Time RG e 25X,R L e 25X 10 ns BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 200 mA ISM* Maximum Pulsed Drain-Source Diode Forward Current 500 mA VSD* Drain-Source Diode Forward Voltage V GS e 0V, I S e 200 mA 1.5 V THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient 312.5 §C/W RiJC Thermal Resistance, Junction to Case 40 §C/W *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

Electrical Characteristics TC e 25§C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage V GS e 0V, I D e 10 mA6 0 V IDSS Zero Gate Voltage Drain Current V DS e 60V, V GS e 0V 1 mA TC e 125§C 500 mA IGSSF Gate-Body Leakage, Forward V GS e 20V 100 nA IGSSR Gate-Body Leakage, Reverse V GS eb 20V b100 nA ON CHARACTERISTICS * VGS(th) Gate Threshold Voltage V DS e VGS,I D e250 mA 1 2.1 2.5 V rDS(ON) Static Drain-Source V GS e 10V, I D e 0.5A 1.2 7.5 X On-Resistance TC e 125§C 2 13.5 X VGS e 5V, I D e 50 mA 1.7 7.5 X TC e 125§C 2.8 13.5 X VDS(ON) Drain-Source On-Voltage V GS e 10V, I D e 0.5A 0.6 3.75 V VGS e 5V, I D e 50 mA 0.09 1.5 V ID(ON) On-State Drain Current V GS e 10V, V DS t 2V DS(ON) 500 2700 mA gFS Forward Transconductance V DS t 2V DS(ON),I D e 200 mA 80 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance V DS e 25V, V GS e 0V, f e 1.0 MHz 20 50 pF Coss Output Capacitance 11 25 pF Crss Reverse Transfer Capacitance 4 5 pF SWITCHING CHARACTERISTICS * tON Turn-On Time V DD e 30V, I D e 200 mA, V GS e 10V, 20 ns tOFF Turn-Off Time RGEN e 25X,R L e 150X 20 ns BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 115 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 800 mA VSD* Drain-Source Diode Forward Voltage V GS e 0V, I S e 115 mA 1.5 V THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient 625 §C/W *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

Electrical Characteristics TC e 25§C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage V GS e 0V, I D e 10 mA6 0 V IDSS Zero Gate Voltage Drain Current V DS e 48V, V GS e 0V 1 mA TC e 125§C1 m A IGSSF Gate-Body Leakage, Forward V GS eb 15V b10 nA ON CHARACTERISTICS * VGS(th) Gate Threshold Voltage V DS e VGS,I D e 1 mA 0.8 2.1 3 V rDS(ON) Static Drain-Source V GS e 10V, I D e 0.5A 1.2 2 X On-Resistance TC e 125§C 2 3.5 X VDS(ON) Drain-Source On-Voltage V GS e 10V, I D e 500 mA 0.6 1 V VGS e 4.5V, I D e 75 mA 0.14 0.225 V ID(ON) On-State Drain Current V GS e 4.5V, V DS t 2V DS(ON) 400 600 mA gFS Forward Transconductance V DS t 2V DS(ON),I D e 200 mA 100 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance V DS e 25V, V GS e 0V, f e 1.0 MHz 20 60 pF Coss Output Capacitance 11 25 pF Crss Reverse Transfer Capacitance 4 5 pF SWITCHING CHARACTERISTICS * ton Turn-On Time V DD e 15V, I D e 500 mA, V GS e 10V, 10 ns toff Turn-Off Time RG e 25X,R L e 25X 10 ns BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 400 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 2000 mA VSD* Drain-Source Diode Forward Voltage V GS e 0V, I S e 400 mA 0.88 1.2 V THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient 200 §C/W *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

Electrical Characteristics TC e 25§C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage V GS e 0V, I D e 10 mA6 0 V IDSS Zero Gate Voltage Drain Current V DS e 60V, V GS e 0V 1 mA TC e 125§C 500 mA IGSSF Gate-Body Leakage, Forward V GS e 20V 100 nA IGSSR Gate-Body Leakage, Reverse V GS eb 20V b100 nA ON CHARACTERISTICS * VGS(th) Gate Threshold Voltage V DS e VGS,I D e250 mA 1 2.1 2.5 V rDS(ON) Static Drain-Source V GS e 10V, I D e 0.5A 1.2 2 X On-Resistance TC e 125§C 2 3.5 X VGS e 5V, I D e 50 mA 1.7 3 X TC e 125§C 2.8 5 X VDS(ON) Drain-Source On-Voltage V GS e 10V, I D e 500 mA 0.6 1 V VGS e 5.0V, I D e 50 mA 0.09 0.15 V ID(ON) On-State Drain Current V GS e 10V, V DS t 2V DS(ON) 500 2700 mA gFS Forward Transconductance V DS t 2V DS(ON),I D e 200 mA 80 320 ms DYNAMIC CHARACTERISTICS Ciss Input Capacitance V DS e 25V, V GS e 0V, f e 1.0 MHz 20 50 pF Coss Output Capacitance 11 25 pF Crss Reverse Transfer Capacitance 4 5 pF SWITCHING CHARACTERISTICS * tON Turn-On Time V DD e 30V, I D e 200 mA, V GS e 10V, 20 ns tOFF Turn-Off Time RG e 25X,R L e 150X 20 ns BODY-DRAIN DIODE RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 280 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 1500 mA VSD* Drain-Source Diode Forward Voltage V GS e 0V, I S e 400 mA 0.88 1.2 V THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient 417 §C/W *Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%.

Physical Dimensions inches (millimeters) TL/G/11378–20 TO-92

2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions inches (millimeters) (Continued) TL/G/11378–21 Note 1: Meets all JEDEC dimensional requirements for TO-236AB. Note 2: Controlling dimension: millimeters. Note 3: Available also in TO-236AA. Contact your local National Semiconductor representative for delivery and ordering information. Note 4: Tape and reel is the standard packaging method for TO-236. TO-236AB (SOT-23) (Notes 3, 4) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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