Download PDF2N7000 UTC
Document overview
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Technical content
UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-064,A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching
applications
FEATURES
*High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability TO-92 1: SOURCE 2: GATE 3: DRAIN ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Drain-Gate Voltage(RGS≤1MΩ) V DGR 60 V Gate -Source Voltage-Continuous -Non Repetitive (tp<50µs) VGSS ±20 ±40 V Maximum Drain Current-Continuous - P u l s e d ID 115 800 mA Maximum Power Dissipation Derated above 25°C PD 400 3.2 mW mW/°C Operating and Storage Temperature Range T J,TSTG -55 to +150 °C Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds TL 300 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Thermal Resistance, Junction-to-Ambient R θJA 312.5 °C/W
UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-064,A ELECTRICAL CHARACTERISTICS (T a =25°C, unless otherwise noted) PARAMETER SYMBOL CONDITIONS. MIN TYP MAX UNITS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS=0V,ID=10 µA 60 V 1 μA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS =0V TJ=125°C 0.5 mA Gate-Body leakage, Forward I GSSF V GS =20V, VDS=0V 100 nA Gate-Body leakage Reverse I GSSR V GS =-20V, VDS=0V -100 nA ON CHARACTERISTICS (Note) Gate Threshold Voltage V GS(th) V DS =VGS , ID=250μA 1 2.1 2.5 V Static Drain-Source On-Resistance V GS =10V, ID=500mA TJ=100°C 1.2 1.7 7.5 13.5 RDS(ON) VGS =5.0V, ID=50mA TJ=100°C 1.7 2.4 7.5 13.5 Ω VGS = 10V, ID=500mA 0.6 3.75 Drain-Source On-Voltage VDS(ON) VGS = 5.0V, ID=50mA 0.09 1.5 V On-State Drain Current I D(ON) V GS=10V, VDS≧2VDS(on) 500 2700 mA Forward Transconductance g FS V DS≧2VDS(on), ID=200mA 80 320 mS DYNAMIC CHARACTERISTICS Input Capacitance C iss 20 50 pF Output Capacitance C oss 11 25 pF Reverse Transfer Capacitance C rss VDS=25V,VGS=0V, f=1.0MHz 4 5 pF Turn-On Time ton VDD=30V, RL=150Ω, ID=200mA, VGS=10V, RGEN=25Ω 20 ns Turn-Off Time toff VDD=30V, RL=150Ω, ID=200mA, VGS=10V, RGEN=25Ω 20 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is 115 mA Maximum Pulsed Drain-Source Diode Forward Current ISM 0.8 A Drain-Source Diode Forward Voltage V SD V GS=0V, Is=115mA(Note ) 0.88 1.5 V Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
Figure 8. Body Diode Forward Voltage