2N7000 CALOGIC

Document overview

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Technical content

N-Channel Enhancement-Mode MOS Transistor 2N7000 / BS170L

DESCRIPTION

The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package.

ORDERING INFORMATION

Part Package Temperature Range 2N7000 Plastic TO-92 -55 oC to +150oC BS170L Plastic TO-92 -55 oC to +150oC X2N7000 Sorted Chips in Carriers -55oC to +150oC CORPORATION 1 2 3 TO-92 (TO-226AA) BOTTOM VIEW SOURCE GATE DRAIN 1 2N7000 PIN CONFIGURATION PRODUCT SUMMARY P/N V(BR)DSS (V) rDS(ON) (Ω ) ID (A) 2N7000 60 5 0.2 BS170 60 5 0.5 CD5 BOTTOM VIEW DRAIN GATE SOURCE BS170L

ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL PARAMETERS LIMITS UNITS TEST CONDITIONS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±40 ID Continuous Drain Current 0.2 A TA = 25oC

0.13 T A = 100oC

IDM Pulsed Drain Current1 0.5 PD Power Dissipation1 0.4 W TA = 25oC

0.16 T A = 100oC

TJ Operating Junction Temperature Range -55 to 150 oCTstg Storage Temperature Range -55 to 150 TL Lead Temperature (1/16" from case for 10 sec.) 300 THERMAL RESISTANCE RATINGS SYMBOL THERMAL RESISTANCE LIMITS UNITS R thJA Junction-to-Ambient 312.5 K/W NOTE: 1. Pulse width limited by maximum junction temperature. SPECIFICATIONS 1 SYMBOL PARAMETER MIN TYP 2 MAX UNIT TEST CONDITIONS STATIC V (BR)DSS Drain-Source Breakdown Voltage 60 70 V ID = 10µA, VGS = 0V VGS(th) Gate-Threshold Voltage 0.8 1.9 3 V DS = VGS , ID = 1mA IGSS Gate-Body Leakage ±10 nA V GS = ±15V, VDS = 0V IDSS Zero Gate Voltage Drain Current µA VDS = 48V, VGS = 0V

1000 T C = 125oC

ID(ON) On-State Drain Current3 75 210 mA V DS = 10V, VGS = 4.5V rDS(ON) Drain-Source On-Resistance3 4.8 5.3 Ω 4VGS = 4.5V, ID = 75mA 2.5 5 V GS = 10V, ID = 0.5A 4.4 9 T C = 125oC VDS(ON) Drain-Source On-Voltage3 0.36 0.4 V 4VGS = 4.5V, ID = 75mA 1.25 2.5 V GS = 10V, ID = 0.5A 2.2 4.5 T C = 125oC 4 gFS Forward Transconductance3 100 170 mS V DS = 10V, ID = 0.2A gOS Common Source Output Conductance3, 4 500 µSV DS = 5V, ID = 50mA DYNAMIC C iss Input Capacitance 16 60 pF V DS = 25V, VGS = 0V, f = 1MHzC oss Output Capacitance4 11 25 C rss Reverse Transfer Capacitance 2 5 SWITCHING tON Turn-On Time 7 10 nS VDD = 15V, RL = 25Ω , ID = 0.5A VGEN = 10V, RG = 25Ω (Switching time is essentially independent of operating temperature)tOFF Turn-Off Time 7 10 NOTES: 1. TA = 25oC unless otherwise specified. 2. For design aid only, not subject to production testing. 3. Pulse test; PW = ≤300µS, duty cycle ≤3%. 4. This parameter not registered with JEDEC.