2N7000 TRSYS

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

3 DRAIN

N-Channel — Enhancement ome

1 SOURCE

Drain Source Voltage Voss | 60 sve Drain-Gate Voltage (Rgg = 1.0 MQ) voerR | 60 | Vdc | TO-92 (TO-226AA) Gate—Source Voltage —Continuous Vas £20 Vdc —Non-repetitive (tp < 50 us) Vasm +40 Vpk Drain Current made Continuous 200 Pulsed 500 Total Power Dissipation @ Tc = 25°C 350 mw Derate above 25°C 2.8 mWPC Operating and Storage Temperature Range —55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol | Max | Unit] Thermal Resistance, Junction to Ambient Maximum Lead Temperature for TL 300 °C Soldering Purposes, 1/16” from case for 10 seconds ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(eR)Dss Ve (V@s = 0, Ip = 10 wAdo) Zero Gate Voltage Drain Current Ipss (Vps = 48 Vde, Vas = 0) wade (Vps = 48 Vde, Vag = 0, Ty = 125°C) made Gate-Body Leakage Current, Forward lassr nAdc (Vagr = 15 Vdc, Vos = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage Vasith) 3.0 Ve (Vos = Vas. |p = 1.0 mAde) Static Drain-Source On-Resistance "DS(on) Ohm (Vas = 10 Vac, Ip = 0.5 Ade) (Vag = 4.5 Vc, Ip = 75 made) Drain-Source On-Voltage Vpston) Ve (Vas = 10 Vdc, Ip = 0.5 Ade) 25 (Vag = 4.5 Vc, Ip = 75 made) 0.45 1, Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

a A B 1 BEISIONING AND TOLERANOINGPER ANS renee i ! 2. CONTROLLING DIMENSION: INCH, t ji 8. CONTOUR OF PACKAGE BEYOND DMENSION A ‘1S UNCONTROLLED. 4, LEADDIMENSIONIS UNCONTROLLED IN AND Wy]. ‘BEYOND DIMENSION K MINIMUM. F L I Pa oss [os [44s [52 | | [e[oir-[ ori ase [530 | My Ce [os Pores tai a9 | [o-oo | 0021 [oanr 05 | D Fe [ous [ooss | tis 190 | s Poteet ose est ot H Qs Fe Posoo-| — Tia70 — | t [0250 |-—[-635 J v c [noo | os [204-266 | SECTION X-x et Tost — 2st | Pa pons > — [ae Cv Pores sas J N srieze CASE 029-11 PRN. SOURDE (TO-226AA) 3. DRAN ISSUE AJ