Download PDF2N7000_07 SUTEX
Document overview
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Technical content
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices
Applications
Amplifi ers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex 2N7000 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information
Device Package BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (mA) 2N7000 TO-92 60 5.0 75 2N7000-G Absolute Maximum Ratings Parameter Value Drain to source voltage BV DSS Drain to gate voltage BV DGS Gate to source voltage ±30V Operating and storage temperature -55°C to +150°C Soldering temperature 1 +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Notes: 1. Distance of 1.6mm from case for 10 seconds. Pin Confi guration N-Channel Enhancement-Mode Vertical DMOS FETs DGS TO-92 (front view) -G indicates package is RoHS compliant (‘Green’)
Electrical Characteristics (TA = 25°C unless otherwise specifi ed) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage 60 - - V V GS = 0V, ID = 10µA VGS(th) Gate threshold voltage 0.8 - 3.0 V V GS = VDS, ID = 1.0mA IGSS Gate body leakage current - - 10 nA V GS = ±15V, VDS = 0V IDSS Zero gate voltage drain current - - 1.0 µA V GS = 0V, VDS = 48V - - 1.0 mA VGS = 0V, VDS = 48V, TA = 125OC ID(ON) ON-state drain current 75 - - mA V GS = 4.5V, VDS = 10V RDS(ON) Static drain-to-source ON-state resistance - - 5.3 Ω VGS = 4.5V, ID = 75mA - - 5.0 V GS = 10V, ID = 500mA GFS Forward transconductance 100 - - mmho V DS = 10V, ID = 200mA CISS Input capacitance - - 60 pF VGS = 0V, VDS = 25V, f = 1.0MHzCOSS Common source output capacitance - - 25 CRSS Reverse transfer capacitance - - 5 t(ON) Turn-ON time - - 10 ns VDD = 15V, ID = 500mA, RGEN = 25Ωt(OFF) Turn-OFF time - - 10 VSD Diode forward voltage drop - 0.85 - V V GS = 0V, ISD = 200mA Notes: 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit Thermal Characteristics Device Package ID (continuous)* (mA) ID (pulsed) (mA) Power Dissipation @TC = 25OC (W) θJC (OC/W) θJA (OC/W) IDR (mA) IDRM (mA) 2N7000 TO-92 200 500 1.0 125 170 200 500 Notes: * ID (continuous) is limited by max rated TJ. 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD RGEN
Typical Performance Curves Output Characteristics 2.5 2.0 1.5 1.0 0.5 01 0 2 0 3 0 5 0 40 VDS (volts) ID )serepma( Saturation Characteristics 0246 1 0 8 VDS (volts) ID )serepma( Maximum Rated Safe Operating Area 0.1 100 101.0 0.01 0.1 1.0 0.001 VDS (volts) ID )serepma( Thermal Response Characteristics )dezilamron( ecnatsiseR lamrehT 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 tp (seconds) Transconductance vs. Drain Current 1.0 0.8 0.6 0.4 0.2 G SF )snemeis( ID (amperes) Power Dissipation vs. Case Temperature 01 5 0 10050 2.0 1.0 1257525 PD )sttaw( TO-92 TA = -55OC 25OC 125OC VDSVDS = 25V TO-92 (pulsed) VGS =10V 2.5 2.0 1.5 1.0 0.5 TO-92 (DC) TC = 25OC TO-92 PD = 1W TC = 25 O C TC (OC) VGS = 10V
Typical Performance Curves (cont.) Gate Drive Dynamic Characteristics QG (nanocoulombs) V SG )stlov( Tj( O V )ht(SG )dezilamron( R )NO(SD )dezilamron( V(th) and RDS Variation with Temperature /g1174 On-Resistance vs. Drain Current R )NO(SD )smho( VB SSD )dezilamron( Tj ( O Transfer Characteristics VGS (volts) ID )serepma( ID (amperes) BVDSS Variation with Temperature 02468 1 0 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 150 1.1 1.0 0.9 0 2.5 1.0 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 VDS = 10V V(th) @ 1mA VGS = 4.5V VGS = 10V 0.5 1.5 2.0 1.0 2.0 3.0 5.0 4.0 TA = -55 O C/g1174 O C 125 O C 40 pF 40V 80 pF 1.9 1.6 1.3 1.0 0.7 0.4 VDS = 25V Capacitance vs. Drain-to-Source Voltage 100 )sdarafocip( C VDS (volts) 01 0 2 0 3 0 4 0 f = 1MHz CISS COSS CRSS RDS @ 10V, 1.0A
(The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) 1 2 3 Seating Plane 2 3 Front View 0.175 - 0.205 0.170 - 0.210
0.500 MIN
0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 0.125 - 0.165
0.135 MIN
0.080 - 0.105 0.014 - 0.022 Side View Bottom View Notes: All dimensions are in millimeters; all angles in degrees. Doc.# DSFP-2N7000 A042507