2N7000 WEITRON

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http://www.weitron.com.tw 2N7000 Rating Symbol Value Unit VDS VGS ID IDM PD R JA ±20 200 500 350 357 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 q C V V mA mA mW C/W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(1) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Maximum Ratings (TA=25 C Unless Otherwise Specified) Device Marking 2N7000=7000 Note 1: Pulse Width Limited by Maximum Junction Temperature Small Signal MOSFET N-Channel GATE SOURCE DRAIN Features: *Low On-Resistance : 5 *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns W WEITRON TO-92 1 2 31. SOURCE 2. GATE 3. DRAIN

http://www.weitron.com.tw 2N7000 Note: 1. For Design Aid Only not Subject to Production Testing. 2. Pulse Test : PW 300µs, Duty Cycle 2% 3. Switching Time is Essentially Independent of Operating Temperature . Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=V , ID=1.0 mA Gate-body Leakage VDS=0V, VGS=15V On-State Drain Current (2) VGS=4.5V, VDS=10V Drain-Source On-Resistance (2) VGS=10V, ID=500mA VGS=4.5V, ID=75mA Forward Transconductance (2) VDS=10V, ID=200mA Drain-Source On-Voltage Static Dynamic(1) Switching (1) (3) Characteristic Symbol UnitMin Max V(BR)DSS VGS (th) ID (on) rDS (on) IGSS IDSS gfs VSD(on) Ciss Coss Crss td(on) td(off ) 60 V 0.8 3.0 V V 1.0 1.0 -10 nA uA mA mA us 5.0 6.0 F nS nS Electrical Characteristics (TA=25 C Unless otherwise noted) Zero Gate Voltage Drain Current VDS=48V, VGS=0V VDS=48V, VGS=0V, Tj=125 C 2.5 0.45 100 5.0 Turn-On Time VDD=15V, RL=30 ,ID=500mA VGEN=10V, RG=25 Turn-Off Time VDD=15V, RL=30 , ID=500mA VGEN=10V, RG=25 W W W W W GS <_ <_ P VGS=10V, ID=500mA VGS=10V, ID=75mA

http://www.weitron.com.tw 2N7000ID , DRAIN CURRENT (AMPS) rDS(on), STATIC DRAIN-SOURCE ON-RESIST ANCE (NORMALIZED) VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) ID , DRAIN CURRENT (AMPS) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VDS , DRAIN SOURCE VOLTAGE (VOLTS) FIG. 1 Ohmic Region 1.0 0.8 0.6 0.4 0.2 VGS , GATE SOURCE VOLTAGE (VOLTS) FIG.2 Transfer Characteristics 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140 T , TEMPERATURE ( C) FIG.3 Temperature versus Static Drain-Source On-Resistance T , TEMPERATURE ( C) FIG.4 Temperature versus Gate Threshold Voltage TA = 25 C VGS = 10 V 9 V 8 V 7 V 6 V 4 V 3 V 5 V VDS = 10 V -55 C 25 C 125 C VGS = 10 V ID = 200 mA VDS = VGS ID = 1.0 mA

http://www.weitron.com.tw Dim A B C D E G H J K L Min 3.000 1.100 0.380 0.360 4.400 3.430 4.300 Max TO-92 TO-92 Outline Dimensions unit:mm 2N7000 5.100 2.030 0.600 1.100 0.500 4.700 2.640 14.500 1.270TYP E C H A B D L J K G 2.440 14.100