2N7000 SECOS

Document overview

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Technical content

200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET Ω

Description

The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage -Continuous VGSM Drain Current Power Dissipation Thermal Resistance, Junction-To-Ambient mA V V mA V ID mW/ W VDS VGS - TA=25 IDM PD RqJA ±20 500 200 0.35 2.8 357 Parameter Symbol Ratings Unit Co Co Operating Junction and Storage Temperature Range CTj, Tstg -55~+150 o ±40-Non-Repetitive (tp 50us) -Continuous -Pulsed -Derate Above Co Co Max. Lead Temperature For Soldering Purposes, 1/16" From Case For 10 Seconds CTL 300 o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 Source Drain Gate L e1 b e SEATING PLANE A D C E A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Millimeter Millimeter TO-92 RoHS Compliant Product

Electrical Characteristics( Tj=25 C Unless otherwise specified) o 0.45 V pF VGS=0V VDS=25V f=1.0MHz mA Ω VGS=10V, ID=500mA VDS=10V ,VGS=4.5V _ _ 2.5 Drain-Source On-Voltage Crss Ciss Coss Input Capacitance Output Capacitance Reverse Transfer Capacitance I Static Drain-Source On-Resistance On-State Drain Current RDS(ON) 0.8 3.0 V V nA uA 100 VGS=0V, ID=250uA VGS= 15V,VDS=0± VDS=48V,VGS=0 VDS=VGS, ID=1.0mA mS VDS=10V,ID=200mA__ BVDSS DSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current VGS(th) IGSS Forward Transconductance Gfs VGS=4.5V,ID=75mA ID(ON) VDS(ON) Notes: 1. Parameter Symbol Max.Typ. Test ConditionMin. Unit Turn-on Delay Time Turn-off Delay Time TOFF _ nS TON VDD=15V,ID=500mA RG=25 RL=30 VGEN=10V Pulse width 300us, dutycycle 2%.≦ VGS=10V, ID=500mA VGS=4.5V,ID=75mA _ _ Ω Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 Elektronische Bauelemente 2N7000 200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3 Characteristics Curve Elektronische Bauelemente 2N7000 200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET Ω