Zetex - 2N7000 N-channel enhancement mode vertical DMOS FET datasheet

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ISSUE 2– NOVEMBER 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V CES 60 V Continuous Drain Current I D 0.2 A Pulsed Drain Current I DM 0.5 A Gate Source Vootage V GS ±40 V Power Dissipation at Tamb=25°C P tot 400 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 60 V ID=10µA, VGS=0V Gate-Source Threshold Voltage V GS(th) 0.8 3.0 V ID=1mA, V DS= VGS Gate-Body Leakage I GSS 10 nA VGS=± 15V, VDS=0V Zero Gate Voltage Drain Current I DSS 1 µA mA VDS=48V, VGS=0 VDS=48V, VGS=0V, T=125°C(2) On-State Drain Current(1) I D(on) 75 mA V DS=10V, VGS=4.5V Static Drain-Source On-State Voltage (1) VDS(on) 2.5 0.4 V V VGS=10V,ID=500mA VGS=4.5V,ID=75mA Static Drain-Source On-State Resistance (1) RDS(on) 5 Ω VGS=10V,ID=500mA Forward Transconductance(1)(2) g fs 100 mS V DS=10V,ID=200mA Input Capacitance (2) C iss 60 pF Common Source Output Capacitance (2) Coss 25 pF V DS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) C rss 5p F Turn-On Time (2)(3) t (on) 10 ns VDD ≈15V, ID=500mA Rg=25Ω , RL=25ΩTurn-Off Time (2)(3) t (off) 10 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator 2N7000 3-12 S G D TO92