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Dated : 16/08/2016 Rev:0 1 SEMTECH ELECTRONICS LTD. 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Drain Source Voltage V DSS 60 V Drain-Gate Voltage (RGS = 1 MΩ) V DGR 60 V Gate-source Voltage Continuous Non-repetitive ( tp ≤ 50 μs) VGS VGSM ± 20 ± 40 V V Drain Current Continuous Pulsed ID IDM 200 500 mA mA Total Power Dissipation P D 350 mW Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC 1. Source 2.Gate 3.Drain TO-92 Plastic Package Source Gate Drain

Dated : 16/08/2016 Rev:0 1 SEMTECH ELECTRONICS LTD. 2N7000 Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Drain-Source Breakdown Voltage a t VGS = 0, ID = 10 μA V(BR)DSS 60 - V Zero Gate Voltage Drain Current a t VDS = 48 V, VGS = 0 IDSS - 1 μA Gate-Body Leakage Current a t VGS = ± 15 V, VDS = 0 ± IGSS - 10 nA Gate Threshold Voltage a t VDS = VGS, ID = 1 mA VGS(th) 0.8 3 V Static Drain-Source On-Resistance a t VGS = 10 V, ID = 500 mA a t VGS = 4.5 V, ID = 75 mA rDS(on) Ω Drain-Source On-Voltage at V GS = 10 V, ID = 500 mA at V GS = 4.5 V, ID = 75 mA VDS(on) 2.5 0.45 V On-State Drain Current a t VGS = 4.5 V, VDS = 10 V ID(on) 75 - mA Forward Transconductance a t VDS = 10 V, ID = 200 mA gfs 100 - mS Input Capacitance a t VDS = 25 V, VGS = 0, f = 1 MHz Ciss - 60 pF Output Capacitance a t VDS = 25 V, VGS = 0, f = 1 MHz Coss - 25 pF Reverse Transfer Capacitance a t VDS = 25 V, VGS = 0, f = 1 MHz Crss - 5 pF Turn-On Delay Time a t VDD = 15 V, ID = 500 mA, RG = 25 Ω, RL = 30 Ω, Vgen =10V ton - 10 ns Turn-Off Delay Time a t VDD = 15 V, ID = 500 mA, RG = 25 Ω, RL = 30 Ω, Vgen=10V toff - 10 ns