2N7000

2N7000_13 VISHAY

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2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix Document Number: 70226 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-1 N-Channel 60-V (D-S) MOSFET /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number V(BR)DSS Min (V) rDS(on) Max (/C0087) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 VQ1000J 60 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low On-Resistance: 2.5 /C0087 /C0068Low Threshold: 2.1 V /C0068Low Input Capacitance: 22 pF /C0068Fast Switching Speed: 7 ns /C0068Low Input and Output Leakage /C0068Low Offset Voltage /C0068Low-Voltage Operation /C0068Easily Driven Without Buffer /C0068High-Speed Circuits /C0068Low Error Voltage /C0068Direct Logic-Level Interface: TTL/CMOS /C0068Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. /C0068Battery Operated Systems /C0068Solid-State Relays TO-226AA (TO-92) Top View S D G G TO-236 (SOT-23) S D Top View Plastic: VQ1000J Sidebraze: VQ1000P Top View TO-92-18RM (TO-18 Lead Form) D S G 2N7000 BS170 Top View Dual-In-Line D 1 D 4 S1 S4 G 1 G 4 NC NC G 2 G 3 S2 S3 D 2 D 3 N N N N Marking Code: 72wll 72 = Part Number Code for 2N7002 w = Week Code ll = Lot Traceability

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix www.vishay.com 11-2 Document Number: 70226 S-04279— Rev. F, 16-Jul-01 /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Single Total Quad Parameter Symbol 2N7000 2N7002 VQ1000J VQ1000P VQ1000J/P BS170 Unit Drain-Source Voltage VDS 60 60 60 60 60 Gate-Source Voltage— Non-Repetitive VGSM /C003440 /C003440 /C003430 /C003425 V Gate-Source Voltage— Continuous VGS /C003420 /C003420 /C003420 /C003420 /C003420 Pulsed Drain Currenta IDM 0.5 0.8 1 1 Thermal Resistance, Junction-to-Ambient R thJA 312.5 625 96 96 62.5 156 /C0095C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 /C0095C Notes a. Pulse width limited by maximum junction temperature. b. tp /C0118 50 /C0109s. /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0266/C0050/C0078/C0055/C0048/C0048/C0048/C0032/C0065/C0078/C0068/C0032/C0050/C0078/C0055/C0048/C0048/C0050/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits 2N7000 2N7002 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 /C0109A 70 60 60 VDS = VGS , ID = 1 mA 2.1 0.8 3 V Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 0.25 mA 2.0 1 2.5 VDS = 0 V, VGS = /C003415 V /C003410 Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003420 V /C0034100 nA VDS = 48 V, VGS = 0 V 1 TC = 125/C0095C 1000 /C0109Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 /C0109A TC = 125/C0095C 500 VDS = 10 V, VGS = 4.5 V 0.35 0.075 On-State Drain Currentb ID(on) VDS = 7.5 V, VGS = 10 V 1 0.5 A VGS = 4.5 V, ID = 0.075 A 4.5 5.3 VGS = 5 V, ID = 0.05 A 3.2 7.5 Drain-Source On-Resistanceb rDS(on) TC = 125/C0095C 5.8 13.5 /C0087DS(on) VGS = 10 V, ID = 0.5 A 2.4 5 7.5 TJ = 125/C0095C 4.4 9 13.5 Forward Transconductanceb gfs VDS = 10 V, ID = 0.2 A 100 80 Common Source Output Conductanceb gos VDS = 5 V, ID = 0.05 A 0.5 mS Dynamic Input Capacitance C iss 22 60 50 Output Capacitance C oss VDS = 25 V, VGS = 0 V f = 1 MHz 11 25 25 pF Reverse Transfer Capacitance C rss f = 1 MHz 2 5 5

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix Document Number: 70226 S-04279— Rev. F, 16-Jul-01 www.vishay.com 11-3 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0266/C0050/C0078/C0055/C0048/C0048/C0048/C0032/C0065/C0078/C0068/C0032/C0050/C0078/C0055/C0048/C0048/C0050/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits 2N7000 2N7002 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Switchingd Turn-On Time tON VDD = 15 V, RL = 25 /C0087 7 10 Turn-Off Time tOFF VDD = 15 V, RL = 25 /C0087 ID /C00940.5 A, VGEN = 10 V, RG = 25 /C0087 7 10 Turn-On Time tON VDD = 30 V, RL = 150 /C0087 7 20 ns Turn-Off Time tOFF VDD = 30 V, RL = 150 /C0087 ID /C0094 0.2 A, VGEN = 10 V, RG = 25 /C0087 11 20 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0266/C0086/C0081/C0049/C0048/C0048/C0048/C0074/C0047/C0080/C0032/C0065/C0078/C0068/C0032/C0066/C0083/C0049/C0055/C0048/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits VQ1000J/P BS170 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 /C0109A 70 60 60 Gate-Threshold Voltage VGS(th) VDS = VGS , ID = 1 mA 2.1 0.8 2.5 0.8 3 V VDS = 0 V, VGS = /C003410 V /C0034100 Gate-Body Leakage IGSS TJ = 125/C0095C /C0034500 nAGSS VDS = 0 V, VGS = /C003415 V /C003410 VDS = 25 V, VGS = 0 V 0.5 Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125/C0095C 500 /C0109ADSS VDS = 60 V, VGS = 0 V 10 /C0109 On-State Drain Currentb ID(on) VDS = 10 V, VGS = 10 V 1 0.5 A VGS = 5 V, ID = 0.2 A 4 7.5 VGS = 10 V, ID = 0.2 A 2.3 5 /C0087Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 0.3 A 2.3 5.5 /C0087 TJ = 125/C0095C 4.2 7.6 VDS = 10 V, ID = 0.2 A 100 Forward Transconductanceb gfs VDS = 10 V, ID = 0.5 A 100 mS Common Source Output Conductanceb gos VDS =5 V, ID = 0.05 A 0.5 Dynamic Input Capacitance C iss 22 60 60 Output Capacitance C oss VDS =25 V, VGS = 0 V f = 1 MHz 11 25 pF Reverse Transfer Capacitance C rss f = 1 MHz 2 5 Switchingd Turn-On Time tON VDD = 15 V, RL = 23 /C0087 7 10 Turn-Off Time tOFF VDD = 15 V, RL = 23 /C0087 ID /C0094 0.6 A, VGEN = 10 V, RG = 25 /C0087 7 10 Turn-On Time tON VDD = 25 V, RL = 125 /C0087 7 10 ns Turn-Off Time tOFF VDD = 25 V, RL = 125 /C0087 ID /C0094 0.2 A, VGEN = 10 V, RG = 25 /C0087 7 10 Notes a. For DESIGN AID ONLY, not subject to production testing. VNBF06 b. Pulse test: PW /C011880 /C0109s duty cycle /C01181%. c. This parameter not registered with JEDEC. d. Switching time is essentially independent of operating temperature.

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix www.vishay.com 11-4 Document Number: 70226 S-04279— Rev. F, 16-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 CapacitanceOn-Resistance vs. Drain Current 0.0 0.2 0.4 0.6 0.8 1.0 0123456 0.0 0.2 0.4 0.6 0.8 1.0 012345678 Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS = 10, 9, 8, 7 V 6.5 V VGS – Gate-to-Source Voltage (V) TJ = –55/C0095C 25/C0095C 125/C0095C 6 V 5.5 V 5 V 4.5 V 4 V 3.5 V 3 V 2.5 V 2, 1 V 0 400 800 1200 1600 2000 2400 0.0 0.5 1.0 1.5 2.0 –55 –30 –5 20 45 70 95 120 145 0 5 10 15 20 25 30 35 Gate Charge Q g – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V) C rss C oss C iss ID = 0.5 A ID – Drain Current (A) On-Resistance vs. Junction Temperature VGS = 10 V, rDS @ 0.5 A TJ – Junction Temperature (/C0095C) rDS @ 10 V = VGS rDS @ 5 V = VGS VGS = 5 V, rDS @ 0.05 A VGS = 0 V f = 1 MHz VDS = 30 V ID – Drain Current (A) ID – Drain Current (A) rDS(on) – On-Resistance ( Ω ) C – Capacitance (pF) VGS – Gate-to-Source Voltage (V) rDS(on) – On-Resistance ( Ω ) (Normalized)

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix Document Number: 70226 S-04279— Rev. F, 16-Jul-01 www.vishay.com 11-5 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 0 2 4 6 8 1 01 21 41 61 82 0 0.001 0.010 0.100 1.000 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) V GS – Gate-to-Source Voltage (V) 500 mA ID = 50 mA TJ = 25/C0095C TJ = 125/C0095C Threshold Voltage –0.75 –0.50 –0.25 –0.00 0.25 0.50 –50 –25 0 25 50 75 100 125 150 ID = 250 /C0109A 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only) Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM IS – Source Current (A) rDS(on) – On-Resistance ( Ω ) VGS(th) – Variance (V)

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