2N6987JAN MICROSEMI

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MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/558 Devices Qualified Level 2N6987 2N6987U 2N6988 JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Symbol Value Units Collector - Emitter Voltage ( 4) V CEO 60 Vdc Collector - Base Voltage (4) V CBO 60 Vdc Emitter - Base Voltage (4) V EBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ T A = +25 0 C 2N6987 (2) 2N6987U (2) 2N6988 (3) P T 1.5 1.0 0.4 W Operating & Storage Junction Temperature Range T op , T stg - 65 to +200 0 C 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/ 0 C above T A = +25 0 C 3) Derate linearly 2.286 mW/ 0 C above T A = +25 0 C. 4) Ratings apply to each transistor in the array. 2N6987* TO - 116 2N6987U*

20 PIN LEADLESS

2N6988*

14 PIN FLAT PACK

*See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage I C = 10 mAdc V (BR)CEO 60 Vdc Collector - Base Cutoff Current V CB = 60 Vdc V CB = 50 Vdc ICBO µAdc ηAdc Emitter - Base Cutoff Current V BE = 5.0 Vd c V EB = 3.5 Vdc IEBO µAdc ηAdc

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2N6987, 2N6988 JAN, SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward - Current Transfer Ratio I C = 0.1 mAdc, V CE = 10 Vdc I C = 1.0 mAdc, V CE = 10 Vdc I C = 10 mAdc, V CE = 10 Vdc I C = 150 mAdc, V CE = 10 Vdc I C = 500 mAdc, V CE =1 0 Vdc h FE 100 100 100 450 300 Collector - Emitter Saturation Voltage I C = 150 mAdc, I B = 15 mAdc I C = 500 mAdc, I B = 50 mAdc V CE(sat) 0.4 1.6 Vdc Base - Emitter Voltage I C = 150 mAdc, I B = 15 mAdc I C = 500 mAdc, I B = 50 mAdc V BE(sat) 1.3 2.6 Vdc DYNAMIC CHARACTERISTICS Magnitude of Small - Signal Short - Circuit Forward - Current Transfer Ratio I C = 50 mAdc, V CE = 20 Vdc, f = 100 MHz h fe  2.0 8.0 Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz h fe 100 Output Capacitance V CB = 10 Vdc, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 8.0 pF Input Capacitance V EB = 2.0 Vdc, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz C ibo 30 pF

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