2N6849_09 MICROSEMI
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1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 T4-LDS-0009 Rev. 2 (091456) Page 1 of 4 DEVICES LEVELS 2N6849 2N6849U JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage V DS -100 Vdc Gate – Source Voltage V GS ± 20 Vdc Continuous Drain Current T C = +25°C ID1 -6.5 Adc Continuous Drain Current T C = +100°C ID2 -4.1 Adc Max. Power Dissipation P tl 25 (1) W Drain to Source On State Resistance R ds(on) 0.3 (2) Ω Operating & Storage Temperature T op, Tstg -55 to +150 °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = -10Vdc, ID = -4.1A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc V(BR)DSS -100 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -0.25mA VDS ≥ VGS, ID = -0.25mA, Tj = +125°C VDS ≥ VGS, ID = -0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 -2.0 -1.0 -5.0 -4.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125°C IDSS1 IDSS2 -25 -0.25 µAdc mAdc Static Drain-Source On-State Resistance VGS = -10V, ID = -4.1A pulsed VGS = -10V, ID = -6.5A pulsed Tj = -125°C VGS = -10V, ID = -4.1A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.3 0.32 0.54 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = -6.5A pulsed VSD -4.3 Vdc 2N6849 TO-205AF (formerly TO-39) SEE FIGURE 1 2N3849U
18 PIN LCC
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 T4-LDS-0009 Rev. 2 (091456) Page 2 of 4 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge V GS = -10V, ID = -6.5A VDS = -50V Qg(on) Qgs Qgd 34.8 6.8 23.1 nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = -6.5A, VGS = -10Vdc, Gate drive impedance = 7.5Ω, VDD = -40Vdc td(on) tr td(off) tf 140 140 140 ns Diode Reverse Recovery Time di/dt ≤ -100A/µs, VDD ≤ -50V, IF = -6.5A trr 250 ns
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 T4-LDS-0009 Rev. 2 (091456) Page 3 of 4 Figure 1 – Case Outline and PIN Configuration for 2N6849
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 T4-LDS-0009 Rev. 2 (091456) Page 4 of 4 Figure 2 – Case Outline and PIN Configuration for 2N6849U