2N6798 MICROSEMI
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1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 T4-LDS-0049 Rev. 1 (072807) Page 1 of 2 DEVICES LEVELS 2N6798 2N6798U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage V DS 200 Vdc Gate – Source Voltage V GS ± 20 Vdc Continuous Drain Current T C = +25°C ID1 5.5 Adc Continuous Drain Current T C = +100°C ID2 3.5 Adc Max. Power Dissipation P tl 25 (1) W Drain to Source On State Resistance R ds(on) 0.4 (2) Ω Operating & Storage Temperature T op, Tstg -55 to +150 °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 4.0 5.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 0.25 µAdc mAdc Static Drain-Source On-State Resistance VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 5.5A pulsed Tj = +125°C VGS = 10V, ID = 3.5A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.4 0.42 0.75 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = 8.0A pulsed VSD 1.4 Vdc TO-205AF (formerly TO-39) U – 18 LCC
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 T4-LDS-0049 Rev. 1 (072807) Page 2 of 2 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V, ID = 5.5A VDS = 50V Qg(on) Qgs Qgd 42.07 5.29 28.11 nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 5.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 77Vdc td(on) tr td(off) tf ns Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 50V, IF = 5.5A trr 500 ns