2N6796_10 MICROSEMI
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6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 T4-LDS-0047 Rev. 2 (101281) Page 1 of 4 DEVICES LEVELS 2N6796 2N6796U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage V DS 100 Vdc Gate – Source Voltage V GS ± 20 Vdc Continuous Drain Current T C = +25°C ID1 8.0 Adc Continuous Drain Current T C = +100°C ID2 5.0 Adc Max. Power Dissipation P tl 25 (1) W Drain to Source On State Resistance R ds(on) 1.8 (2) Ω Operating & Storage Temperature T op, Tstg -55 to +150 °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 5.0A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 100 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 4.0 5.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 80V, Tj = +125°C IDSS1 IDSS2 0.25 µAdc mAdc Static Drain-Source On-State Resistance VGS = 10V, ID = 5.0A pulsed VGS = 10V, ID = 8.0A pulsed Tj = +125°C VGS = 10V, ID = 5.0A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.18 0.195 0.35 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = 8.0A pulsed VSD 1.5 Vdc TO-205AF (formerly TO-39) U – 18 LCC
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com T4-LDS-0047 Rev. 2 (101281) Page 2 of 4 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: Qg(on) Qgs Qgd nC On-State Gate Charge Gate to Source Charge Gate to Drain Charge V GS = 10V, ID = 8.0A VDS = 50V 28.51 6.34 16.59 SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time I D = 8.0A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 30Vdc td(on) tr td(off) tf ns Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 50V, IF = 8.0A trr 300 ns
1 Dimensions are in inches. Millimeters are given for general information only. 2 Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). 3 Dimension k measured from maximum HD. 4 Outline in this zone is not controlled. 5 Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 8 Radius (r) applies to both inside corners of tab. 9 Drain is electrically connected to the case. 10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions for TO-205AF.
2 Millimeters are given for general information only. FIGURE 2. Physical dimensions for LCC.