2N6758 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2N6758
DESCRIPTION
- VGS Rated at ±20V
- Silicon Gate for fast switching speeds
- IDSS 、RDS(ON) ,specified at elevated temperature
- Low drive reqirements
APPLICATIONS
designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 9 A Ptot Total Dissipation@TC=25℃ 75 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2N6758
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage V GS= 0; ID= 1mA 200 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2 4 V RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 6A 0.4 Ω IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 1 mA VSD Diode Forward Voltage IF= 9A; VGS= 0 1.6 V PDF pdfFactory Pro www.fineprint.cn