2N6757 FAIRCHILD
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; . nese TS ee BY DE Pssese74 0027795 4 T : . 3469674 FAIRCHILD SEMICONDUCTOR 84D 27795 D : ~ a 2N6757/2N6758 FAIRCHILD N-Channel Power MOSFETs, A Schlumberger Company 9 A, 150 V/200 Vv - * 7-39-11 Power And Discrete Division Description TO-204AA ‘These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed i applications, such as switching power supplies, UPS, AC ! and DC motor controls, relay and solenoid drivers and i . high energy pulse circuits. i © Vas Rated at +20 V ? =) t © Silicon Gate for Fast Switching Speeds po 1 © loss, Ros(on» Specified at Elevated Temperature © Low Drive Requirements © Ease of Paralleling . : Maximum Ratings . Rating Rating i Symbol 2N6758 2N6757 Unit Voan | Drain to Gate Voltage v i Rigg = 1 MO. t Ty. Tsig | Operating Junction and 85 to +150 85 to +160 °C : Storage Temperatures i if Maximum Lead Temperature °C i for Soldering Purposes, i 1/16" From Case for 10 8 Maximum On-State Characteristics | Roston) | Static Drain-to-Source 2 On Resistance lb Drain Current A Continuous at To = 25°C 9.0 8.0 Continuous at To = 100°C 6.02 5.0? lom Pulsed 16% 122 Maximum Thermal Characteristics Rajc | Thermal Resistance, 1.67 1.67 *c/w Junction to Case Pp Total Power Dissipation i 75 w at To = 25°C Notes ‘Allvalues are JEDEG registered except s noted. For information concerning connection diagram and package outline, refer o Section 7 ee 70 to,
. [0 wees Bu DE aban 79 ooe7796 oo ID i 3469674 FAIRCHILD SEMICONDUCTOR 84D 27796 a | - ; | 2N6757/2N6758 : i ! T-39-11 | ' q ee Electrical Characteristics (Tc = 25°C unless otherwise noted) | Off Characteristics Vierjoss | Drain Source Breakdown Voltage | [vy Vas =0 V, Ip=1 mA . loss Zero Gate Voltage Drain Current fr | +f m | Vos = Rated Voss, Vas = 0 V Vos = Rated Voss, ! ‘On Characteristics Rosion | Statio Drain-Source Onfesistance || | «S| Vas = 10V 2N6758 [| oo | Ips6A 2N6757 ee Ip=5A 2N6768 ee ee Ip=6 A, To= 125°C i 2N6757 ee Ip=8 A, To = 125°C Vpston) | Drain-Source On-Voltage’ [| ae | Vv . 2N6758 Vos = 10 V; Ip= 9 A : 2N6757 [| 48 | Vas = 10 V; Ip=8 A A Dynamic Characteristics Ga | Roe Tt Concise [0 | eo [oF | Switching Characteristics (Tc = 25°C, Figures 9, 10) ‘cm | Tarr Soap Tams || a Q5 Total Gate Charge nC | Vas=10V, p= 12 A f | 29 mw
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