2N6758 MICROSEMI
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1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 T4-LDS-0112 Rev. 2 (092088) Page 1 of 3 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage V DS 200 Vdc Gate – Source Voltage V GS ± 20 Vdc Continuous Drain Current T C = +25°C ID1 9 Adc Continuous Drain Current T C = +100°C ID2 6 Adc Max. Power Dissipation T C = +25°C Ptl 75 (1) W Drain to Source On State Resistance R ds(on) 0.4 (2) Ω Operating & Storage Temperature T op, Tstg -55 to +150 °C Note: (1) Derated Linearly by 0.6 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 6A ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Vdc Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 4.0 5.0 Vdc Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 0.25 µAdc mAdc Static Drain-Source On-State Resistance VGS = 10V, ID = 6A pulsed VGS = 10V, ID = 9A pulsed Tj = +125°C VGS = 10V, ID = 6A pulsed rDS(on)1 rDS(on)2 rDS(on)3 0.4 0.49 0.8 Ω Ω Ω Diode Forward Voltage VGS = 0V, ID = 9A pulsed VSD 1.6 Vdc TO-204AA (TO-3) 2N6758
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 T4-LDS-0112 Rev. 2 (092088) Page 2 of 3 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V, ID = 9A VDS = 160V Qg(on) Qgs Qgd 5.7 nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 9A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 100Vdc td(on) tr td(off) tf ns Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 9A trr 500 ns
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 T4-LDS-0112 Rev. 2 (092088) Page 3 of 3 PACKAGE DIMENSIONS Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .875 22.23 CH .250 .360 6.35 9.14 HR .495 .525 12.57 13.34 HR1 .131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 LL .312 .500 7.92 12.70 LL1 .050 1.27 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 3, 5 PS1 .205 .225 5.21 5.72 3, 5 s1 .655 .675 16.64 17.15 NOTES: 1 Dimensions are in inches. 2 Millimeters are given for general information only. 3 These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating plane. When gauge is not used measurement will be made at the seating plane. 4 The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 5 Mounting holes shall be deburred on the seating plane side. 6 Drain is electrically connected to the case. 7 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1. Physical dimensions of transistor (TO-204AA).