2N6676 CENTRAL

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  • Manufacturer or author: Provided By digicamel.com
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MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6676 2N6677 2N6678 UNITS Collector-Emitter Voltage V CEV 450 550 650 V Collector-Emitter Voltage V CEO 300 350 400 V Emitter-Base Voltage V EBO 8.0 V Continuous Collector Current I C 15 A Peak Collector Current I CM 20 A Continuous Base Current I B 5.0 A Power Dissipation P D 175 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance ΘJC 1.0 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV V CE=Rated VCEV, VBE(off)=1.5V 100 μA ICEV V CE=Rated VCEV, VBE(off)=1.5V, TC=100°C 1.0 mA IEBO V EB=8.0V 2.0 mA BVCEO I C=200mA (2N6676) 300 V BVCEO I C=200mA (2N6677) 350 V BVCEO I C=200mA (2N6678) 400 V VCE(SAT) I C=15A, IB=3.0A 1.5 V VBE(SAT) I C=15A, IB=3.0A 1.5 V hFE V CE=3.0V, IC=15A 8.0 C ob V CB=10V, IE=0, f=1.0MHz 500 pF ft V CE=10V, IC=1.0A, f=5.0MHz 3.0 10 MHz td 0.1 μs tr 0.6 μs ts 2.5 μs tf 0.5 μs 2N6676 2N6677 2N6678 NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6676 SERIES types are NPN Silicon Power Transistors designed for high voltage switching applications. MARKING: FULL PART NUMBER VCC=200V , IC=15A, IB1=IB2=3.0A tp=20μs, Duty Cycle≤2.0% VBB≈6.0V , RL=13.5Ω TO-3 CASE R0 (26-July 2010) www.centralsemi.com

TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER www.centralsemi.com R0 (26-July 2010)