2N6676 ISC

Document overview

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Technical content

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678

DESCRIPTION

  • With TO-3 package
  • High voltage capability
  • Fast switching speeds
  • Low saturation voltage

APPLICATIONS

Designed for high voltage switching applications such as :

  • Off-line power supplies
  • Converter circuits
  • Pulse width modulated regulators PINNING (See Fig.2) PIN DESCRIPTION

1 Base

2 Emitter

3 Collector

Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6676 450 2N6677 550 VCBO Collector-base voltage 2N6678 Open emitter 650 V 2N6676 300 2N6677 350 VCEO Collector-emitter voltage 2N6678 Open base 400 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 5 A PT Total power dissipation Tc=25℃ 175 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ Fig.1 simplified outline (TO-3) and symbol

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6676 300 2N6677 350 VCEO(SUS) Collector-emitter sustaining voltage 2N6678 IC=0.2A ; IB=0 400 V VCEsat Collector-emitter saturation voltage I C=15A; IB=3A 1.5 V VBEsat Base-emitter saturation voltage I C=15A; IB=3A 1.5 V ICEV Collector cut-off current VCE=RatedVCEV;VBE(off)=-1.5V TC=100℃ 0.1 1.0 mA IEBO Emitter cut-off current V EB=8V; IC=0 2.0 mA hFE-1 DC current gain I C=1A ; VCE=5V 15 50 hFE -2 DC current gain I C=15A ; VCE=3V 8 COB Output capacitance I E=0 ;VCB=10V;f=0.1MHz 500 pF fT Transition frequency I C=1A ; VCE=10V;f=5.0MHz 3 MHz Switching times td Delay time 0.2 μs tr Rise time 0.6 μs ts Storage time 2.5 μs tf Fall time IC=15A; IB1=-IB2=3.0A VCC=200V; tp=20μs; Duty Cycle≤2.0% VBB=6V,RL=1.35Ω 0.6 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.0 ℃/W

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6676 2N6677 2N6678 PACKAGE OUTLINE Fig.2 Outline dimensions