2N6520 LUGUANG
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 5
Technical content
TO – 92 1. EMITTER 2. BASE 3. COLLECTOR
FEATURES
/g122Complement to 2N6517 /g122High voltage. /g45/g36/g59/g44/g45/g56/g45/g3/g53/g36/g55/g44/g49/g42/g54/g3/g /g55/g65/g32/g2 /g24/g1071/g3/g55/g5 /g29/g22/g56/g56/g3/g52/g52/g25/g22/g55/g90/g26/g56/g22/g3/g5 /g52/g52/g22/g2 /g 2/g3 /g54/g92/g50/g69/g52/g29/g3 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 /g5 /g65/g55/g65/g50/g22/g52/g22/g55/g3/g52/g65/g29/g55/g22/g3/g56/g5 /g26/g52/g3 /g52/g35/g32/g50/g3 Collector-Base Voltage V /g52/g35/g40/g50/g3 Collector-Emitter Voltage -350 V /g52/g40/g32/g50/g3 Emitter-Base Voltage V /g44/g35/g3 Collector Current -Continuous -0.5 A /g5 /g39/g3 Collector Power Dissipation 625 mW Operation Junction and Storage Temperature Range /g1071TJ,/g55/g56/g52/g24 /g3 -55/g97/g14/g20/g24/g19 /g53/g537/g45/g36 /g3 /g3Thermal Resistance /g73rom Junction /g87o Ambient /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 /g1071/W /g50/g53/g39/g40/g53/g44/g49/g42/g3/g44/g49/g4 /g50/g53/g45/g36/g55/g44/g50/g49/g3 /g5 /g65/g55/g52/g3/g49/g55/g50/g69/g22/g55/g3/g5 /g65/g20/g25/g65/g24/g22/g3/g5 /g65/g20/g25/g26/g5 /g24/g3/g45/g22/g52/g25/g52/g2 /g3/g5 /g65/g20/g25/g3/g52/g55/g65/g5 /g52/g26/g52/g92/g3 /g3/g3 /g55/g50/g16/g28/g21 /g21/g49/g25/g24/g21/g19 /g21/g49/g25/g24/g21/g19/g16/g55/g36 /g21/g19/g19 /g55/g50/g16/g28/g21 /g37/g88/g79/g78 /g20/g19/g19/g19/g83/g70/g86/g18/g37/g68/g74 /g55/g68/g83/g72 /g21/g19/g19/g19/g83/g70/g86/g18/g37/g82/g91 -350 /g45/g36/g53/g46/g44/g49/g42 /g3/g54/g82/g79/g76/g71/g3/g71/g82/g87/g32/g42/g85/g72/g72/g81/g3/g80/g82/g79/g71/g76/g81/g74/g3/g70/g82/g80/g83/g82/g88/g81/g71/g3/g71/g72/g89/g76/g70/g72/g15/g3 /g59/g59/g59/g32/g38/g82/g71/g72/g3 /g21/g49/g25/g24/g21/g19/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 /g3/g76/g73/g3/g81/g82/g81/g72/g15/g87/g75/g72/g3/g81/g82/g85/g80/g68/g79/g3/g71/g72/g89/g76/g70/g72 /g3/g3/g2 /g49/g25/g24/g2 /g 9 /g9 /g9 /g9 Equivalent Circuit /g3 TO-92 Plastic-Encapsulate PNP Transistors 2N6520APPLICATIONS /g122High voltage control circuit application. http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1
/g40/g42/g40/g35/g55/g53/g44/g35/g36/g42/g3/g35/g43/g36/g53/g36/g35/g55/g40/g53/g44/g54/g55/g44/g35/g54 aT =25/g1071 unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=- 0.1mA,IE=0 -350 V Collector-emitter breakdown voltage V(BR)CEO * I C=-1mA,IB=0 -350 V Emitter-base breakdown voltage V(BR)EBO I E=-0.01mA,IC=0 -5 V Collector cut-off current ICBO V CB=-250V,IE=0 -0.05 /g541A Emitter cut-off current IEBO V EB=-4V,IC=0 -0.05 /g541A VCE=-10V, IC=-1mA 20 VCE=-10V, IC=-10mA 30 VCE=-10V, IC=-30mA 30 200 VCE=-10V, IC=-50mA 20 200 DC current gain hFE VCE=-10V, IC=-100mA 15 IC=-10mA,IB=-1mA -0.3 V IC=-20mA,IB=-2mA -0.35 V IC=-30mA,IB=-3mA -0.5 V Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -1 V IC=-10mA,IB=-1mA -0.75 V IC=-20mA,IB=-2mA -0.85 V Base-emitter saturation voltage VBE (sat) IC=-30mA,IB=-3mA -0.9 V Base-emitter voltage VBE V CE=-10V, IC=-100mA -2 V Transition frequency fT * V CE=-20V,IC=-10mA,f=20MHz 40 200 MHz *Pulse test: pulse width /g148300/g541s, duty cycle/g148 2.0%. Typical Characteristics -1 -10 -100 100 1000 -10 -20 -30 -40 -50 -60 -70 -80 -200 IC COMMON EMITTER VCE= -10V Ta=100ć Ta=25ć COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE hFE —— COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25ć -500uA -450uA -400uA -350uA -300uA -250uA -200uA -150uA -100uA IB=-50uA IC —— VCE 2N6520 http://www.lgesemi .com Revision:20170701-P2 mail:lge@lgesemi.com
-10 -100 100 -1 -10 -100 -100 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -1 -10 100 -1 -10 -100 -10 -100 -1000 -10000 -0 -300 -600 -900 -1200 -10 -100 AMBIENT TEMPERATURE Ta ( )ć COLLECTOR POWER DISSIPATION PC (mW) PC —— Ta COMMON EMITTER VCE= -20V Ta=25ć COLLECTOR CURRENT IC (mA) TRANSITION FREQUENCY fT (MHz) -500 fT —— /g533=10 ICVBEsat —— Ta=25ć Ta=100 ć BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) IC f=1MHz IE=0/IC=0 Ta=25 ć VCB/VEBCob/Cib —— CAPACITANCE CT (pF) REVERSE VOLTAGE V (V) Cib Cob 300 -20 -200 /g533=10 ICVCEsat —— Ta=100 ć Ta=25ć COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COMMON EMITTER VCE=-10V COLLECTOR CURRENT IC (mA) T a=25ć T a=100ć BASE-EMITTER VOLTAGE V BE (mV) -500 IC —— V BE 2N6520 http://www.lgesemi .com Revision:20170701-P3 mail:lge@lgesemi.com
/g45/g26/g5 /g45/g65/g9 /g45/g26/g5 /g45/g65/g9 A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D4 ./g22/g19/g194.700/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g25/g28/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g27/g24 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 /g301 1.600 0.063 h 0.000 0.380 0.000 0.015 /g54/g92/g50/g69/g52/g29/g39/g26/g50/g22/g5 /g56/g26/g52/g5 /g56/g3/g44/g5 /g3/g45/g26/g29/g29/g26/g50/g22/g52/g22/g55/g56 /g39/g26/g50/g22/g5 /g56/g26/g52/g5 /g56/g3/g44/g5 /g3/g44/g5 /g20/g25/g22/g56 1.270 TYP 0.050 TYP /g55/g50/g 6/g25/g2 /g3/g5 /g65/g20/g25/g65/g24/g22/g3/g50/g55/g52/g29/g26/g5 /g22/g3/g39/g26/g50/g22/g5 /g56/g26/g52/g5 /g56/g3 /g55/g50/g 6/g25/g2 /g3/g54/g55/g24/g24/g22/g56/g52/g22/g2 /g3/g5 /g65/g2 /g3/g42/g65/g92/g52/g55/g52/g3 2N6520 http://www.lgesemi .com Revision:20170701-P4 mail:lge@lgesemi.com
/g55/g50/g 6/g25/g2 /g37DSHDQG5HHO 2N6520 http://www.lgesemi .com Revision:20170701-P5 mail:lge@lgesemi.com