2N6520 FOSHAN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-92 塑封封装 PNP半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. 耐压高。 High voltage. 用于高压控制电路。 High voltage control circuit application. PIN1：Collector PIN 2 ：Base PIN 3 ：Emitter 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 1 23

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage V EBO -5.0 V Collector Current - Continuous I C -500 mA Base Current - Continuous I B -250 mA Collector Power Dissipation P C 625 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=-100μA IE=0 -350 V Collector to Emitter Breakdown Voltage VCEO I C=-1.0mA IB=0 -350 V Emitter to Base Breakdown Voltage V EBO I E=-10μA IC=0 -5.0 V Collector Cut-Off Current I CBO V CB=-250V IE=0 -0.05 μA Emitter Cut-Off Current I EBO V EB=-4.0V IC=0 -0.05 μA DC Current Gain hFE(1) V CE=-10V IC=-30mA 30 200 hFE(2) V CE=-10V IC=-100mA 15 hFE(3) V CE=-10V IC=-1.0mA 20 Collector to Emitter Saturation Voltage VCE(sat) (1) IC=-10mA IB=-1.0mA -0.3 V VCE(sat) (2) IC=-30mA IB=-3.0mA -0.5 V Base to Emitter Saturation Voltage VBE(sat) (1) IC=-10mA IB=-1.0mA -0.75 V VBE(sat) (2) IC=-30mA IB=-3.0mA -0.9 V Base to Emitter On Voltage V BE(ON) VCE=-10V IC=-100mA -2.0 V Current Gain Bandwidth Product f T VCE=-20V IC=-10mA f=20MHz 40 200 MHz Output Capacitance C ob VCB=-20V IE=0 f=1MHz 6.0 pF Turn On Time t on VBE(off)=-2.0V VCC=-100V IC=-50mA IB1=-10mA 200 ns Turn Off Time t off VCC=-100V IC=-50mA IB1=IB2=-10mA 3.5 ns 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： N6520：  为型号代码 Note: BR: Company Code. N6520: Product Type. **: Lot No. Code, code change with Lot No. N6520 ** BR

Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-92 1,000 10 10,000 5 50,000 135×190 237×172×102 560×245×195 1,000 10 10,000 10 100,000 135×190 237×172×102 560×245×375 编带包装 / A M M O Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/tape 只/纸带 Tape/Inner Box 纸带/盒 Rows/Inner Box 纸带层/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Inner Box 盒 Outer Box 箱 TO-92 3,000 1 120 10 30,000 328×230×42 小箱 480×346×235， 大箱 547×407×268 使用说明 / N o t i c e s