Download PDF2N6520 FS
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
- 10. 31 1/1Revision No : 0 2N6520 TRANSISTOR (PNP)
FEATURES
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol T est c onditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=- 0.1mA,IE=0 -350 V Collector-emitter breakdown voltage V(BR)CEO * I C=-1mA,IB=0 -350 V Emitter-base breakdown voltage V(BR)EBO I E=-0.01mA,IC=0 -5 V Collector cut-off current ICBO V CB=-250V,IE=0 -0.05 μA Emitter cut-off current IEBO V EB=-4V,IC=0 -0.05 μA VCE=-10V, IC=-1mA 20 VCE=-10V, IC=-10mA 30 VCE=-10V, IC=-30mA 30 200 VCE=-10V, IC=-50mA 20 200 DC current gain hFE VCE=-10V, IC=-100mA 15 IC=-10mA,IB=-1mA -0.3 V IC=-20mA,IB=-2mA -0.35 V IC=-30mA,IB=-3mA -0.5 V Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -1 V IC=-10mA,IB=-1mA -0.75 V IC=-20mA,IB=-2mA -0.85 V Base-emitter saturation voltage VBE (sat) IC=-30mA,IB=-3mA -0.9 V Base-emitter voltage VBE V CE=-10V, IC=-100mA -2 V Transition frequency fT * V CE=-20V,IC=-10mA,f=20MHz 40 200 MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 0 5 3 - e g a t l o V e s a B - r o t c e l l o C VCEO V 0 5 3 - e g a t l o V r e t t i m E - r o t c e l l o C VEBO V 5 - e g a t l o V e s a B - r e t t i m E IC A 5 . 0 - t n e r r u C r o t c e l l o C PC W m 5 2 6 n o i t a p i s s i D r e w o P r o t c e l l o C RθJA Thermal Resistance From Junction To Ambient 200 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ TO-92 DIM MILLIMETERS A B C D F G H J L
4.70 MAX
4.80 MAX
3.70 MAX
1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B AJ G H F F L E C E C M
0.51 MAXM
0.55 MAX
- EMITTER 3. COLLECTOR 2. BASE