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D a t e d : 1 6 / 0 8 / 2 0 1 6 R e v : 01 ® SEMTECH ELECTRONICS LTD. 2N6520 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 350 V Collector Emitter Voltage -V CEO 350 V Emitter Base Voltage -V EBO 5 V Collector Current -I C 500 mA Power Dissipation P tot 625 mW Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC 1. Emitter 2. Base 3. Collector TO-92 Plastic Package
D a t e d : 1 6 / 0 8 / 2 0 1 6 R e v : 01 ® SEMTECH ELECTRONICS LTD. 2N6520 Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain a t - VCE = 10 V, -IC = 1 mA a t - VCE = 10 V, -IC = 10 mA a t - VCE = 10 V, -IC = 30 mA a t - VCE = 10 V, -IC = 50 mA a t - VCE = 10 V, -IC = 100 mA hFE hFE hFE hFE hFE 200 200 Collector Base Cutoff Current a t - VCB = 250 V -ICBO - 50 nA Emitter Base Cutoff Current a t - VEB = 4 V -IEBO - 50 nA Collector Base Breakdown Voltage a t - IC = 100 µA -V(BR)CBO 350 - V Collector Emitter Breakdown Voltage a t - IC = 1 mA -V(BR)CEO 350 - V Emitter Base Breakdown Voltage a t - IE = 10 µA -V(BR)EBO 5 - V Collector Emitter Saturation Voltage a t - IC = 10 mA, -IB = 1 mA a t - IC = 20 mA, -IB = 2 mA a t - IC = 30 mA, -IB = 3 mA a t - IC = 50 mA, -IB = 5 mA -VCE(sat) -VCE(sat) -VCE(sat) -VCE(sat) 0.3 0.35 0.5 V V V V Base Emitter Saturation Voltage a t - IC = 10 mA, -IB = 1 mA a t - IC = 20 mA, -IB = 2 mA a t - IC = 30 mA, -IB = 3 mA -VBE(sat) -VBE(sat) -VBE(sat) 0.75 0.85 0.9 V V V Base Emitter On Voltage a t - VCE = 10 V, -IC = 100 mA -VBE(on) - 2 V Gain Bandwidth Product a t - VCE = 20 V, -IC = 10 mA, f = 20 MHz fT 40 200 MHz Collector Base Capacitance a t - VCB = 20 V, f = 1 MHz Ccb - 6 pF