Zetex - 2N6520 Silicon planar medium power transistor datasheet

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Technical content

ISSUE 1 – MARCH 94

FEATURES

  • 350 Volt V CEO * Gain of 15 at I C=-100mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Base Current IB -250 mA Continuous Collector Current IC -500 mA Power Dissipation at Tamb = 25°C Ptot 680 mW Operating and Storage Temperature Range T j:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -350 V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage V (BR)CEO -350 V I C=-1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-10µA, IC=0 Collector Cut-Off Current I CBO -50 nA V CB=-250V, IE=0 Emitter Cut-Off Current I EBO -50 nA V EB=-4V, IC=0 Collector-Emitter Saturation Voltage V CE(sat) -0.3 -0.35 -0.5 -1.0 V V V V I C=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* IC=-50mA, IB=-5mA* Base-Emitter Saturation Voltage V BE(sat) -0.80 -0.85 -0.90 V V V I C=-10mA, IB=-1mA* IC=-20mA, IB=-2mA* IC=-30mA, IB=-3mA* Base-Emitter Turn-On Voltage V BE(on) -2.0 V IC=-100mA, V CE=-10V* Static Forward Current Transfer Ratio hFE 20 200 200 I C=-1mA, VCE=-10V IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-50mA, VCE=-10V* IC=-100mA, VCE=-10V* Transition Frequency f T 40 MHz I C=-10mA, VCE=-20V, f=20MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% E-Line TO92 Compatible 2N6520 3-4 C B E Not Recommended for New Design Please Use FMMT558