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  • Manufacturer or author: Provided By digicamel.com
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-0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 02-Sep-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Base Emitter Collector RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 High voltage transistors ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage V CBO -350 V Collector to Emitter Voltage V CEO -350 V Emitter to Base Voltage V EBO -5 V Collector Current - Continuous I C -0.5 A Collector Power Dissipation P C 0.625 W Thermal resistance, junction to ambient R θJA 200 °C / W Junction, Storage Temperature T J, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Voltage V (BR)CBO -350 - - V I C= -100μA, IE = 0A Collector to Emitter Breakdown Voltage V (BR)CEO * -350 - - V I C= -1mA, IB = 0A Emitter to Base Breakdown Voltage V (BR)EBO -5 - - V I E= -10μA, IC = 0A Collector Cut-Off Current I CBO - - -50 nA V CB= -250V, IE = 0 A Emitter Cut-Off Current I EBO - - -50 nA V EB= -4V, IC =0 mA DC Current Gain h FE * 20 - - VCE= -10V, IC= -1mA 30 - - V CE= -10V, IC= -10mA 30 - 200 V CE= -10V, IC= -30mA 20 - 200 V CE= -10V, IC= -50mA 15 - - V CE= -10V, IC= -100mA Collector to Emitter Saturation Voltage V CE(sat) * - - -0.3 V IC= -10mA, IB= -1mA - - -0.35 I C= -20mA, IB= -2mA - - -0.5 I C= -30mA, IB= -3mA - - -1.0 I C= -50mA, IB= -5mA Base to Emitter Saturation Voltage V BE(sat) * - - -0.75 V IC= -10mA, IB= -1mA - - -0.85 I C= -20mA, IB= -2mA - - -0.9 I C= -30mA, IB= -3mA Base to Emitter voltage V BE(on) * - - -2 V V CE= -10V, IC= -100mA Collector-Base Capacitance C cb - - 6 pF V CB = -20V, IE = 0A, f=1MHz Emitter-Base Capacitance C eb - - 80 pF V EB = -0.5V, IC = 0A, f=1MHz Transition Frequency f T * 40 - 200 MHz V CE = -20V, IC = -10mA, f=20MHz *Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%. TO-92 REF. Millimeter Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 A CE K F D B G H J

-0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 02-Sep-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES