2N6520 DCCOM

Document overview

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for applications requiring high breakdown voltage. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO -350 - - V IC=-100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -350 - - V IC=-1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-10µA, IC=0 Collector Cutoff Current ICBO - - -50 nA VCB=-250V, IE=0 EmitterCutof f Current IEBO -50 nA VEB=-4V , IC=0 VCE(sat)1 - - -0.30 V IC=-10mA, IB=-1mA Collector-Emitter Saturation Voltage(1) VCE(sat)2 - - -0.35 V IC=-20mA, IB=-2mA VCE(sat)3 - - -0.50 V IC=-30mA, IB=-3mA Base-Emitter Saturation Voltage(1) VBE(sat)1 - - -0.75 V IC=-10mA, IB=-1mA VBE(sat)2 - - -0.85 V IC=-20mA, IB=-2mA VBE(sat)3 - - -0.90 V IC=-30mA, IB=-3mA Base-Emitter On Voltage(1) VBE(on) - - -2 V IC=-100mA, VCE=-10V hFE1 20 - - - IC=-1mA, VCE=-10V DC Current Gain(1) hFE2 30 - - - IC=-10mA, VCE=-10V hFE3 30 - 200 - IC=-30mA, VCE=-10V hFE4 20 - 200 - IC=-50mA, VCE=-10V Transition Frequency fT 40 - 200 MHz IC=-10mA, VCE=-20V, f=20MHz Output Capacitance Cob - - 6 pF VCB=-20V, f=1MHz, IE=0

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%