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TO-92 Plastic-Encapsulated Transistors 2N6520 TRANSISTOR (PNP)
FEATURES
P CM : 0.625 W (Tamb=25 ℃) Collector current I CM : - 0 . 5 A Collector-base voltage V (BR)CBO : -350 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 µA , IE=0 -350 V Collector-emitter breakdown voltage V(BR)CEO * IC= -1 mA , IB=0 -350 V Emitter-base breakdown voltage V(BR)EBO IE= -10 µA, IC=0 -5 V Collector cut-off current ICBO V CB= -250 V , IE=0 -0.05 µA Emitter cut-off current IEBO V EB= -4 V , IC=0 -0.05 µA DC current gain hFE VCE=-10 V, IC= -1 mA VCE=-10 V, IC= -10 mA VCE=-10 V, IC= -30 mA VCE=-10 V, IC= -50 mA VCE=-10 V, IC= -100 mA 200 200 Collector-emitter saturation voltage VCE(sat) IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA IC= -50 mA, IB= -5 mA -0.3 -0.35 -0.5 V Base-emitter saturation voltage VBE(sat) IC= -10 mA, IB= -1 mA IC= -20 mA, IB= -2 mA IC= -30 mA, IB= -3 mA -0.75 -0.85 -0.9 V Base-emitter voltage VBE(on) V CE=-10V, IC= -100 mA -2 V Transition frequency f T VCE=-20 V, IC= -10 mA f =20 MHz 40 200 MHz * Pulse test , Pulse width ≤300µs, Duty cycle ≤2%. 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR Transys Electronics LI M ITE D