Download PDF2N6520 SAMSUNG
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
- a SAMSUNG SEMICONDUCTCR . INC LYE D | | 7964142 OO07200 T i 2N6520. '. PNP EPITAXIAL SILICON TRANSISTOR . T-29-21 HIGH VOLTAGE TRANSISTOR : 10-02 ABSOLUTE MAXIMUM RATINGS (T.=25°C) Collector:Base Voltage Veoo -360 v Collector-Emitter Voltage Veco -360 v Emitter-Base Voltage Vex0 -5 v . Collector Current le -500 mA Base Current le ~260 mA ‘ Collactor Dissipation ~ Po 0.625 w Derate above 25°C 5 | mw . Junction Temperature Tj 160 °c Storage Temperatura Tata ~65~1650 | °C . : 1. Emer 2, Base 3, Colactor a ELECTRICAL CHARACTERISTICS (T,=25°C) Collector Base Breakdown Vottag | BVcxo | le=— 100A, [=O -350 v *Collector Emitter Breakdown Voltage | BVceo lo=—1mA, le=O 360 v Emitter Base Breakdown Voltage BVes0 | fe=—10yA, =O -5 v Collector Cutoff Current eso Voa=—250V, le=0 -60 | nA Emitter Cutoff Current teso Ves=—4V, lo=0 -50} nA |. “DC Current Gain bee Vee=~10V, ke=—1mA 20 Voe=—10V, =~ 10mA 30 Vee*~10V, k= -SOmA 20 | "200 Vee=—10V, k=-100mA 16 . Collector-Emitter Saturation Voltage Vee (sat) c=-10mA, lp=—1mA -0.30 Vv le=—20mA, Ig= —-2mA -0.35 | v 1=-3OmA, I= —3mA -060 | Vv le=—S0mA, Iy=—5mA -1/} Vv Base-Emitter Saturation Voltage Vor (sat) | =—-10mA, In=—1mA -0.75 | Vv Ice=—20mA, le=—2mA -0.85 | Vv Base Emitter On Voltage Voc (on) | Voe==10V, lo=—100mA -2|v *Curent Gain Bandwidth Product fr Vee=—20V, lo=-10mA, f=20MHz | 40 | 200 | MHz Cotector Base Capacitance Coe Vco=—20V, le=0, f= 1MHz 6 | pF . Emitter Base Cepecitance Ceb Veo™—0.5V, lo=0, f=1MHz . 100 | pF . Tum On Time ton Vee (off)=—2V, Voc=— 100V 200 ns Ig=—5OmA, lot =—10mA Tum Off Time toft Vec=—100V, I= —50mA 3.6 | ns Ip =1p2=—10mA * Pulse Test: PWS300ys, Duty Cycles 2% . & SAMSUNG SEMICONDUCTOR "470,
SAMSUNG SEMICONDUCTOR INC _ LHE D Beseause 0007201 1 i :2N6520 PNP EPITAXIAL SILICON TRANSISTOR 2N¢520 ___PNP EPITAXIAL SILICON TRANSISTOR . » T+29-21 oo oo Tan erm soo FE EH ~so00F FH (Se . sol TT g a | | YY | | HH 3 2000) HTT CT TT pees a A SSesiiiio sesh Secetii amass Feet aT a oa HY i so — FETE ETHIC 3 00 at ae ar Sasol CELUI LETH 3 200) Mt t | UIC) CCT a a ae a ee a a CHE HHA 2 20] eH a I CCN * CHET wo eaten coon winsome TURN-ON TIME TEMPERATURE COEFFICIENTS: | 3| ‘300] INN eee i} NSU TH PAHs it MLE ry oe || eSNG) Seu 5a oe el ee | q HA 4 eee eee | | ae “SAI EHH Eo Sree eee a a e-UUTTI CCT SE ocr von cuore a ‘mn me sma sn amore iia) eS OO | OO | i eo 0 oo soot —| SCT vee tain= s000-1 TI a | el eco Ft LCI ome ea See || | * Tot A Sa wo t+ EHH eae ei EHH HTT em car ma ‘micucwine : & SAMSUNG SEMICONDUCTOR e am
SAMSUNG SEMICONDUCTOR INC L4E O Beseurse ooo?ede 3 I : - 2N6520. PNP EPITAXIAL SILICON TRANSISTOR ~ —- a T-29-21 connect ; i ana aul ; a Sc § ERTS St a . CONC | sancmuronna a ee i eB samsune SEMICONDUCTOR . 472 .