2N6517 JIANGSU

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TO – 92 1. EMITTER 2. BASE 3. COLLECTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N6517 TRANSISTOR (NPN)

FEATURES

MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =0.1mA,I E =0 350 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 350 V Emitter-base breakdown voltage V (BR)EBO I E =0.01mA,I C =0 6 V Collector cut-off current I CBO V CB =250V,I E =0 0.05 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.05 μA V CE =10V, I C =1mA 20 V CE =10V, I C =10mA 30 V CE =10V, I C =30mA 30 200 V CE =10V, I C =50mA 20 200 DC current gain h FE V CE =10V, I C =100mA 15 I C =10mA,I B =1mA 0.3 V Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 1 V I C =10mA,I B =1mA 0.75 V I C =20mA,I B =2mA 0.85 V Base-emitter saturation voltage V BE (sat) I C =30mA,I B =3mA 0.9 V Base-emitter voltage V BE V CE =10V, I C =100mA 2 V Transition frequency f T V CE =20V,I C =10mA,f=20MHz 40

200 MHz

Collector output capacitance C ob V CB =20V,I E =0, f=1MHz 6 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. Symbol Parameter Value Unit V CBO Collector-Base Voltage 350 V V CEO Collector-Emitter Voltage 350 V V EBO Emitter-Base Voltage 6 V I C Collector Current 0.5 A P C Collector Power Dissipation 625 mW R θJA Thermal Resistance From Junction To Ambient 200 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Dec,2015

A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Layout www.cj-elec.com 2 C,Dec,2015

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