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WEJ ELECTRONIC CO.,LTD 2N6517 TRANSISTOR (NPN)

FEATURES

P C M : 625 mW (Tamb=25 ℃ ) Collector current I C M : 5 0 0 mA Collector-base voltage V (BR)CBO : 3 5 0 V Operating and storage junction temperature range T J, Tstg: -55 ℃ to +150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100 µ A, IE=0 350 V Collector-emitter breakdown voltage V(BR)CEO Ic=1 mA, IB=0 350 V Emitter-base breakdown voltage V(BR)EBO IE= 10 µ A, IC=0 6 V Collector cut-off current ICBO V CB=250 V, IE=0 50 nA Emitter cut-off current IEBO V EB=5 V, IC=0 50 nA hFE(1) VCE=10 V, IC=1 mA 20 hFE(2) V CE=10 V, IC=10 mA 30 hFE(3) V CE=10 V, IC=30 mA 30 200 hFE(4) V CE=10V, IC=50 mA 20 200 DC current gain hFE(5) V CE=10V, IC=100 mA 15 VCE(sat)(1) I C=10 mA, IB=1 mA 0.3 V VCE(sat)(2) I C=20 mA, IB=2 mA 0.35 V VCE(sat)(3) I C=30 mA, IB=3 mA 0.5 V Collector-emitter saturation voltage VCE(sat)(4) I C=50 mA, IB=5 mA 1 V VBE(sat)(1) I C=10 mA, IB=1 mA 0.75 V VBE(sat)(2) I C=20 mA, IB=2 mA 0.85 V Base-emitter saturation voltage VBE(sat)(3) I C=30 mA, IB=3 mA 0.9 V Base-emitter voltage VBE V CE= 20V, IC=10 mA Transition frequency fT VCE=10 V, IC=100 mA 40 200 MHz Collector output capacitance Cob V CB=20 V, IE=0, f=1 MHz 6 pF 1 2 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 2N6517 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. R o HS