2N6517 DGNJDZ

Document overview

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Technical content

TO – 92 1. EMITTER 2. BASE 3. COLLECTOR 2N6517 TRANSISTOR (NPN)

FEATURES

/g122Complement to 2N6520 /g42/g36/g55/g44/g42/g56/g42/g3/g53/g36/g55/g44/g45/g42/g54/g3/g /g55 /g62 /g32/g2 /g24/g1071/g3/g22/g2 /g75/g72/g26/g26/g3/g22/g27/g75/g72/g25/g50/g76/g26/g72/g3/g2 /g22/g27/g72/g7 /g 2/g3 /g54/g52/g20/g65/g22/g75/g3 /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 /g5 /g62/g25/g62/g20/g72/g27/g72/g25/g3/g57/g62/g75/g22/g72/g3/g56/g2 /g76/g27/g3 /g57 /g32/g37/g50 /g3 Collector-Base Voltage V /g57 /g32/g40/g50 /g3 Collector-Emitter Voltage 350 V /g57 /g40/g37/g50 /g3 Emitter-Base Voltage 6 V /g44 /g32 /g3 Collector Current -Continuous 0.5 A /g5 /g35 /g3 Collector Power Dissipation 625 mW Operation Junction and Storage Temperature Range /g1071TJ,/g55/g26/g27/g74 /g3 /g53 /g537/g45/g36 /g3ٞThermal Resistance ɍrom Junction /g87o /g50/g53/g35/g40/g53/g44/g45/g42/g3/g44/g45/g4 /g50/g53/g42/g36/g55/g44/g50/g45ٞ g5 /g62/g25/g27/g3/g45/g22/g20/g65/g72/g25/g3/g5 /g62/g70/g72/g62/g74/g72/g3/g5 /g62/g70/g72/g76/g2 /g74/g3/g42/g72/g27/g75/g22/g7 /g3/g5 /g62/g70/g72/g3/g52/g22/g62/g2 /g27/g76/g27/g52/g3 g21/g49/g25/g24/g20/g26 /g21/g49/g25/g24/g20/g26/g16/g55/g36 /g21/g19/g19 /g55/g50/g16/g28/g21 /g37/g88/g79/g78 /g20/g19/g19/g19/g83/g70/g86/g18/g37/g68g /g55/g68/g83/g72 /g21/g19/g19/g19/g83/g70/g86/g18/g37/g82/g91 350 /g42/g36/g53/g46/g44/g45/g42 /g59/g59/g59/g32/g38/g82/g71/g72 /g3 /g21/g49/g25/g24/g20/g26/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72 /g3/g3/g2 /g45/g25/g24/g20/g26 /g5 /g5 /g5 Equivalent Circuit /g55/g50/g16/g28/g21 DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

/g40/g47/g40/g32/g55/g53/g44/g32/g36/g47/g3/g32/g43/g36/g53/g36/g32/g55/g40/g53/g44/g54/g55/g44/g32/g54 a T =25/g1071 unless otherwise specified Parameter Symbol Test conditions Min Ty p Max Unit Collector-base breakdown voltage V (BR)CBO I C =0.1mA,I E =0 350 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 350 V Emitter-base breakdown voltage V (BR)EBO I E =0.01mA,I C =0 6 V Collector cut-off current I CBO V CB =250V,I E =0 0.05 /g541A Emitter cut-off current I EBO V EB =5V,I C =0 0.05 /g541A V CE =10V, I C =1mA 20 V CE =10V, I C =10mA 30 V CE =10V, I C =30mA 30 200 V CE =10V, I C =50mA 20 200 DC current gain h FE V CE =10V, I C =100mA 15 I C =10mA,I B =1mA 0.3 V Collector-emitter saturation voltage V CE(sat) I C =50mA,I B =5mA 1 V I C =10mA,I B =1mA 0 .75 V I C =20mA,I B =2mA 0 .85 V Base-emitter saturation voltage V BE (sat) I C =30mA,I B =3mA 0.9 V Base-emitter voltage V BE V CE =10V, I C =100mA 2 V Transition frequency f T V CE =20V,I C =10mA,f=20MHz 40 200 MHz Collector output capacitance C ob V CB =20V,I E =0, f=1MHz 6 pF *Pulse test: pulse width /g148300/g541s, duty cycle/g148 2.0%. Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

/g48/g76/g81/g48/g68/g91/g48/g76/g81/g48/g68/g91 A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D4 ./g22/g19/g194.700/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g25/g28/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g19/g17/g20/g27/g24 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 /g301 1.600 0.063 h 0.000 0.380 0.000 0.015 /g54/g92/g80/g69/g82/g79/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g48/g76/g79/g79/g76/g80/g72/g87/g72/g85/g86 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g44/g81/g3/g44/g81/g70/g75/g72/g86 1.270 TYP 0.050 TYP /g55/g50/g16/g28/g21/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g55/g50/g16/g28/g21/g3/g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87 /g3 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com

/g55/g50/g16/g28/g21/g37DSHDQG5HHO Dongguan Nanjing Electronics Ltd. www.dgnjdz.com