2N6515 CENTRAL

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Technical content

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are complementary silicon transistors designed for high voltage driver and amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE 2N6515 2N6516 2N6517 MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N6518 2N6519 2N6520 UNITS Collector-Base Voltage V CBO 250 300 350 V Collector-Emitter Voltage V CEO 250 300 350 V Emitter-Base Voltage (NPN) V EBO 6.0 V Emitter-Base Voltage (PNP) V EBO 5.0 V Continuous Collector Current I C 500 mA Continuous Base Current I B 250 mA Power Dissipation P D 625 mW Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C 2N6515 2N6516 2N6517 ELECTRICAL CHARACTERISTICS: (TA=25°C) 2N6518 2N6519 2N6520 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS ICBO V CB=150V - 50 - - - - nA ICBO V CB=200V - - - 50 - - nA ICBO V CB=250V - - - - - 50 nA IEBO V EB=5.0V (NPN) - 50 - 50 - 50 nA IEBO V EB=4.0V (PNP) - 50 - 50 - 50 nA BVCBO IC=100μA 250 - 300 - 350 - V BVCEO IC=1.0mA 250 - 300 - 350 - V BVEBO IE=10μA (NPN) 6.0 - 6.0 - 6.0 - V BVEBO IE=10μA (PNP) 5.0 - 5.0 - 5.0 - V VCE(SAT) IC=10mA, IB=1.0mA - 0.30 - 0.30 - 0.30 V VCE(SAT) IC=20mA, IB=2.0mA - 0.35 - 0.35 - 0.35 V V CE(SAT) IC=30mA, IB=3.0mA - 0.50 - 0.50 - 0.50 V VCE(SAT) IC=50mA, IB=5.0mA - 1.0 - 1.0 - 1.0 V VBE(SAT) IC=10mA, IB=1.0mA - 0.75 - 0.75 - 0.75 V VBE(SAT) IC=20mA, IB=2.0mA - 0.85 - 0.85 - 0.85 V VBE(SAT) IC=30mA, IB=3.0mA - 0.90 - 0.90 - 0.90 V VBE(ON) VCE=10V, IC=100mA - 2.0 - 2.0 - 2.0 V hFE VCE=10V, IC=1.0mA 35 - 30 - 20 - hFE VCE=10V, IC=10mA 50 - 45 - 30 - hFE VCE=10V, IC=30mA 50 300 45 270 30 200 hFE VCE=10V, IC=50mA 45 220 40 200 20 200 hFE VCE=10V, IC=100mA 25 - 20 - 15 - R2 (18-January 2016) www.centralsemi.com

LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER TO-92 CASE - MECHANICAL OUTLINE ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS fT V CE=20V, IC=10mA, f=20MHz 40 200 MHz Ccb V CB=20V, IE=0, f=1.0MHz 6.0 pF Ceb V EB=0.5V, IC=0, f=1.0MHz (NPN) 80 pF Ceb V EB=0.5V, IC=0, f=1.0MHz (PNP) 100 pF ton V CC=100V, VBE=2.0V, IC=50mA, IB1=10mA 200 ns toff V CC=100V, IC=50mA, IB1=IB2=10mA 3.5 μs www.centralsemi.com R2 (18-January 2016)

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