Download PDF2N6517 FS
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Technical content
- 10. 31 1/1Revision No : 0 2N6517 TRANSISTOR (NPN)
FEATURES
MAXIMUM RATINGS (Ta=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol T est c onditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C=0.1mA,IE=0 350 V Collector-emitter breakdown voltage V(BR)CEO I C=1mA,IB=0 350 V Emitter-base breakdown voltage V(BR)EBO I E=0.01mA,IC=0 6 V Collector cut-off current ICBO V CB=250V,IE=0 0.05 μA Emitter cut-off current IEBO V EB=5V,IC 5 0 . 0 0 = μA VCE=10V, IC=1mA 20 VCE=10V, IC=10mA 30 VCE=10V, IC=30mA 30 200 VCE=10V, IC=50mA 20 200 DC current gain hFE VCE=10V, IC=100mA 15 IC=10mA,IB=1mA 0.3 V Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 1 V IC=10mA,IB=1mA 0.75 V IC=20mA,IB=2mA 0.85 V Base-emitter saturation voltage VBE (sat) IC=30mA,IB=3mA 0.9 V Base-emitter voltage VBE * V CE=10V, IC=100mA 2 V Transition frequency fT * V CE=20V,IC=10mA,f=20MHz 40 200 MHz Collector output capacitance Cob V CB=20V,IE=0, f=1MHz 6 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. t i n U e u l a V r e t e m a r a P l o b m y S VCBO V 0 5 3 e g a t l o V e s a B - r o t c e l l o C VCEO V 0 5 3 e g a t l o V r e t t i m E - r o t c e l l o C VEBO V 6 e g a t l o V e s a B - r e t t i m E IC A 5 . 0 t n e r r u C r o t c e l l o C PC W m 5 2 6 n o i t a p i s s i D r e w o P r o t c e l l o C RθJA Thermal Resistance From Junction To Ambient 200 ℃/W Tj 0 5 1 e r u t a r e p m e T n o i t c n u J ℃ Tstg 0 5 1 + ~ 5 5 - e r u t a r e p m e T e g a r o t S ℃ TO-92 DIM MILLIMETERS A B C D F G H J L
4.70 MAX
4.80 MAX
3.70 MAX
1.00 1.27 0.85 0.45 14.00 0.50 2.30 D 1 2 3 B AJ G H F F L E C E C M
0.51 MAXM
0.55 MAX
- EMITTER 3. COLLECTOR 2. BASE