2N6517 DCCOM

Document overview

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for applications requiring high breakdown voltage. Pinning 1 = Emitter 2 = Base 3 = Collector TO-92 .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27)Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Dimensions in inches and (millimeters) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 350 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 350 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10µA, IC=0 Collector Cutoff Current ICBO - - 50 nA VCB=250V, IE=0 EmitterCutoff Current IEBO - - 50 nA VEB=5V, IC=0 VCE(sat)1 - - 0.30 V IC=10mA, IB=1mA Collector-Emitter Saturation Voltage(1) VCE(sat)2 - - 0.35 V IC=20mA, IB=2mA VCE(sat)3 - - 0.50 V IC=30mA, IB=3mA Base-Emitter Saturation Voltage(1) VBE(sat)1 - - 0.75 V IC=10mA, IB=1mA VBE(sat)2 - - 0.85 V IC=20mA, IB=2mA VBE(sat)3 - - 0.90 V IC=30mA, IB=3mA Base-Emitter On Voltage(1) VBE(on) - - 2 V IC=100mA, VCE=10V hFE1 20 - - - IC=1mA, VCE=10V DC Current Gain(1) hFE2 30 - - - IC=10mA, VCE=10V hFE3 30 - 200 - IC=30mA, VCE=10V hFE4 20 - 200 - IC=50mA, VCE=10V Transition Frequency fT 40 - 200 MHz IC=10mA, VCE=20V, f=20MHz Output Capacitance Cob - - 6 pF VCB=20V, f=1MHz, IE=0

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%