2N6517 ZETEX

Document overview

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Technical content

ISSUE 1 – MARCH 94

FEATURES

  • 350 Volt V CEO * Gain of 15 at I C=100mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 350 V Collector-Emitter Voltage V CEO 350 V Emitter-Base Voltage V EBO 6V Base Current I B 250 mA Continuous Collector Current I C 500 mA Power Dissipation at Tamb = 25°C P tot 680 mW Operating and Storage Temperature Range T j:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 350 V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 350 V I C=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=10µA, IC=0 Collector Cut-Off Current I CBO 50 nA V CB=250V, IE=0 Emitter Cut-Off Current I EBO 50 nA V EB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.3 0.35 0.5 1.0 V V V V I C=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* IC=50mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.80 0.85 0.90 V V V I C=10mA, IB=1mA* IC=20mA, IB=2mA* IC=30mA, IB=3mA* Base-Emitter Turn-On Voltage VBE(on) 2.0 V IC=100mA, V CE=10V* Static Forward Current Transfer Ratio hFE 20 200 200 I C=1mA, VCE=10V IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=50mA, VCE=10V* IC=100mA, VCE=10V* Transition Frequency f T 40 MHz I C=10mA, VCE=20V, f=20MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% E-Line TO92 Compatible 2N6517 3-3 C B E