2N6517 SAMSUNG

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SAMSUNG S EMICONDUCTOR INC Lue DO I 2b4uL4e OOOVLI? 3 i 2N6517 . NPN EPITAXIAL SILICON TRANSISTOR i: 'T-29-21 HIGH VOLTAGE TRANSISOTR —— # Collector-Emitter Voltage: Vero =350V T0982 * Collector Dissipation: Pe (max)=625mW . . ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Colléctor-Base Voltage Veoo 350 v . Collector-Emitter Voltage Veso 350 v Emitter-Base Voltage Veso 6 v Collector Current le 500 mA ‘ Collector Dissipation Pe 625 mW Junction Temperature u 150 °C Storage Temperature Tato -85~150 | °C __ * Refer to 2N6515 for graphs 1. emer 2. Base 9. Cotector ELECTRICAL CHARACTERISTICS (Ta =25°C) “eae om [ss [oe [ne Tom [om Collector-Emitter Breakdown Voltage BV ceo Ig=1mA, lp=0 350 Collector-Base Breakdown Voltage | BVcs0 le=100pA, le =0 350 Emitter-Base Breakdown Voltage BVen0 le=10pA, le=0 6 Collector Cut-otf Currant eso Vee =250V, le =0 50 Emitter Cut-off Current levo Veo =5V, lo=0 50 DC Current Gain be lo=tmA, Vee =10V 20 JemtOmA, Voe=10V 30 . le=30mA, Vee =10V 30 200 Je=50mA, Vee =10V 20 200 I= 100A, Vee =10V 16 Collector-Emitter Saturation Voltage | Vee (sat) | te=10mA, la=imA 03 Ie=20mA, lp=2mA 0.35 J¢=30mA, le=3mA 05 fe=50MA, Ip=5mA 1 Base-Emitter Saturation Voltage Vee (sat) | c= 10mA, le=tmA 0.75 t¢=20mA, Ip=2mA 0.85 1c=30mA, le=3mA, 0.9 Collect-Base Capacitance Cob Vea =20V, le=0 6 te1MHz *Current Gain Bandwidth Product fr I =10MA, Vos =20V_ 40 200 {=20MHz Base Emitter On Voltage Vee (on) | lo=100mA, Vee =10V 2 * pulse Test: Pulse Width < 300s, Duty Cycle<2% & SAMSUNG SEMICONDUCTOR : Mer