Download PDF2N6515 MCC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 6
Technical content
Features
l 150oC Junction Temperature l Voltage and Current are negative for PNP transistors Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit Collector-Emitter Voltage 2N6515 2N6519 2N6517, 2N6520 VCEO 250 300 350 V Collector-Base Voltage 2N6515 2N6519 2N6517, 2N6520 VCBO 250 300 350 V Emitter-Base Voltage 2N6515-6517 2N6519-6520 V EBO 6.0 5.0 V Base Current I B 250 mA Collector Current(DC) IC 500 mA Power Dissipation@TA=25 o C Pd 625 5.0 W mW / o C Power Dissipation@TC=25oC Pd 1.5 W mW / o C Thermal Resistance, Junction to Ambient Air 200 o C/W Thermal Resistance, Junction to Case 83.3 oC/W Operating & Storage Temperature Tj, TSTG -55~150 oC NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW Pin Configuration Bottom View C B E INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 A E B C D G DIMENSIONS TO-92 www.mccsemi.com R JA R JC /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents
21201 Itasca Street Chatsworth
/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06/G06/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19 MCC
www.mccsemi.com MCC Collector Cutoff Current (VCB = 150 Vdc, IE = 0) 2N6515 (VCB = 200 Vdc, IE = 0) 2N6519 (VCB = 250 Vdc, IE = 0) 2N6517, 2N6520 ICBO nAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 2N6515, 2N6517 (VEB = 4.0 Vdc, IC = 0) 2N6519, 2N6520 IEBO nAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 C = 10 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 C = 30 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 C = 50 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 C = 100 mAdc, VCE = 10 Vdc) 2N6515 2N6519 2N6517, 2N6520 hFE 300 270 200 220 200 200 Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) 0.30 0.35 0.50 1.0 Vdc Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) VBE(sat) 0.75 0.85 0.90 Vdc Base–Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) VBE(on) — 2.0 Vdc ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) 2N6515 2N6519 2N6517, 2N6520 V(BR)CEO 250 300 350 Vdc Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 250 300 350 Vdc Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) 2N6515, 2N6517 2N6519, 2N6520 V(BR)EBO 6.0 5.0 Vdc 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. NPN 2N6515 2N6517 PNP 2N6519 2N6520
www.mccsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) fT 40 200 MHz Collector–Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) C cb — 6.0 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6519, 2N6520 C eb 100 pF SWITCHING CHARACTERISTICS Turn–On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) ton — 200 µs Turn–Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) toff — 3.5 µs 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. NPN 2N6515 2N6517 PNP 2N6519 2N6520 MCC