2N6338 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon NPN Power Transistors 2N6338/6339/6340/6341
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341
- High Switching Speed
- Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A
APPLICATIONS
- Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W SYMBOL PARAMETER VALUE UNIT 2N6338 120 2N6339 140 2N6340 160 VCBO Collector-Base Voltage 2N6341 180 V 2N6338 100 2N6339 120 2N6340 140 VCEO Collector-Emitter Voltage 2N6341 150 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A PC Collector Power Dissipation @TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 2 isc Silicon NPN Power Transistors 2N6338/6339/6340/6341
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT 2N6338 100 2N6339 120 2N6340 140 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N6341 IC= 50mA ; IB= 0 150 V VCE(sat)-1 Collector-Emitter Saturation Voltage I C= 10A; IB= 1A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage I C= 25A; IB= 2.5A 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 25A; IB= 2.5A 2.5 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 2V 1.8 V 2N6338 VCE= 50V; IB= 0 50 2N6339 VCE= 60V; IB= 0 50 2N6340 VCE= 70V; IB= 0 50 ICEO Collector Cutoff Current 2N6341 VCE= 75V; IB= 0 μA ICBO Collector Cutoff Current VCB= RatedVCBO; IE= 0 10 μA ICEX Collector Cutoff Current VCE= RatedVCEO;VBE(off)= 1.5V VCE= RatedVCEO;VBE(off)= 1.5V,TC=150℃ 10 1.0 μA mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 0.1 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 2V 50 hFE-2 DC Current Gain IC= 10A ; VCE= 2V 30 120 hFE-3 DC Current Gain IC= 25A ; VCE= 2V 12 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V ;ftest= 10MHz 40 MHz COB Output Capacitance IE= 0 ; VCB= 10V ;ftest= 0.1MHz 300 pF Switching Times tr Rise Time VCC= 80V; IC= 10A;IB1= 1A, VBE(off)= 6V 0.3 μs tstg Storage Time 1.0 μs tf Fall Time VCC= 80V; IC= 10A; IB1= -IB2= 1A, 0.25 μs