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® ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, EVISIONS Doe NOU SPC=FO0S EMlective: 7/8/02 DoP Now 1388 WHETHER IN WHOLE OR IN PART. CAN. Be REPRODUCED TECHNOLOGY. SPC~F005.016 [1885 [8 | UPDATE TO ROHS COMPLIANT | EO [02/4/05] HO | 276/08 | HO_ | 276/08 | Description: A silicon PNP Darlington transistors in a TO-3 type case designed for general-purpose amplifier and low-frequency applications. Features: = High DC Current Gain PNP RoHS — Collector—Emitter Sustaining Voltage: Voeocgy) = 100V Min @ 100mA > 3 Collector Compliant — Monolithic Construction with Built-in Base—Emitter Shunt Resistors it 4 Absolute Maximum Ratings: we) 2 Base = Collector—Emitter Voltage, Voeo = 100V Se) = Collector-Base Voltage, Veg = 100V | U — Emitter—Base Voltage, Veg = 5V 1 Emitter — Collector Current, Ic sontinuous = 128 Electrical Characteristics: (Ty = +25°C unless otherwise specified) ak = = Bose Current, Ip = 200mA [Parametr ‘(St [et Coie *(n = Total Power Dissipation (To = +25°C), Po = 150W OFF Characteristics Derate above 2510 © O.B57H/"C [cotector-Emiter Stoning Votoge [extn Je = T0OnA m=O Nate 1 ——“freo[= | — Operating Junction Temperature Range, T, = —65° to +200°C ollector—Emitter_ Sustaining Voltage | "ceo(sus) [Ie = 100mA, Ip = 0, Note ~ Storage Temperature Range, Ty, = —85' to +200°C Collector Cut-Off Current fico Me = 50. e= 0 rma J — Thermal Resistance, Junction—to—Case, Ryo = 1.17°C/W eee [Mee = 10. Von = TV [= fos [ma | je Nis = TOOT Tagan = TS FTO [s Ira | i [Enter Gao Gorent ims Me = = 0 Si ed | c { ON Characteristics (Note 1)
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BOMERETIERSE) [Bose~ trier Saturation Vohoge Muay [le = 12A y= 120m —SSSSC*d Sid [e [2s.20/26.67| Rady 4, | [aose=tmiter ov votoge ain ee = = 6 Si 2) ro) k E Dynamic Characteristics 7, [smot-Signt Curent Gon fs a= b= Sapa ———oo= | bi [20.80 30.20] / | | | Magnitude of Common Emmiter [Pel Nee = 3V, Ip = SA, f = IMHz 4 MHz H_ | 29.90] 30.40 ‘Small—Signal Short—Circuit en eeee f [Suet Copactonce im Nw ST Soo | 10.67] 11.18 . Collector (Case) |. _____ 4 ——_-| Note 1. Pulse test: Pulse Width = 300us, Duty Cycle = 2% oisciaMen TOLERANCES: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED | UNLESS OTHERWISE |_HISHAM ODISH 5/19/03 Transistor, Bipolar, TO—3, PNP, 12 A, 100 V, 150 W HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE BELIEVE TO BE ACCURATE AND RELIABLE, — SINCE SPECIFIED, CHECKED BY: SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE ‘BEYOND OUR CONTROL, THE USER SHALL DETERMINE. THE SUITABLY’ OF THE bRooucr | DIMENSIONS ARE JEFF MCVICKER | 5/20/03| A 2N6052 35C0735.0WG | B FOR THE INTENDED USE AND ASSUME ALL RISK AND DATE: LIABILITY WHATSOEVER IN CONNECTION. THEREWITH, PURPOSES ONLY. APPROVED BY: g DANIEL CAREY 5/20/03 | SCALE: NTS U.O.M.: Millimeters SHEET: 1 OF 1