2N6052 ISC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPDarlingtionPowerTransistor 2N6052

DESCRIPTION

  • Built-in Base-EmitterShuntResistors
  • HighDCcurrentgain- hFE =750 (Min) @IC =-6A
  • Collector-EmitterSustaining Voltage- VCEO(SUS)=-100V(Min)
  • Complementtotype 2N6059

APPLICATIONS

  • Designedforgeneralpurpose amplifierandlowfrequency switchingapplications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.17 ℃/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -100 V VCEO Collector-EmitterVoltage -100 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -12 A ICM CollectorCurrent-Peak -20 A IB BaseCurrent -0.2 A PC CollectorPowerDissipation@TC=25℃ 150 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -65~150 ℃

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPDarlingtionPowerTransistor 2N6052 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-EmitterSustainingVoltage IC=-50mA;IB=0 -100 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=-6A;IB=-24mA -2.0 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=-12A;IB=-120mA -3.0 V VBE(sat) Base-EmitterSaturationVoltage IC=-12A;IB=-120mA 4.0 V VBE(on) Base-EmitterOnvoltage IC=-6A;VCE=-3V -2.8 V ICEO CollectorCutoffcurrent VCE=-50V;IB=0 -1.0 mA ICEX CollectorCutoffcurrent VCE=-100V;VBE(off)=-1.5V VCE=-100V;VBE(off)=-1.5V,TC=150℃ -0.5 -5.0 mA IEBO EmitterCut-offcurrent VEB=-5V;IC=0 -2.0 mA hFE-1 DCCurrentGain IC=-6A;VCE=-3V 750 18000 hFE-2 DCCurrentGain IC=-12A;VCE=-3V 100 COB OutputCapacitance IE=0;VCB=-10V;ftest=0.1MHz 500 pF