2N6050 CENTRAL

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MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6057 2N6058 2N6059 UNITS Collector-Base Voltage V CBO 60 80 100 V Collector-Emitter Voltage V CEO 60 80 100 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 12 A Peak Collector Current I CM 20 A Continuous Base Current I B 0.2 A Power Dissipation P D 150 W Operating and Storage Junction Temperature T J, Tstg -65 to +200 °C Thermal Resistance JC 1.17 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEV V CE=Rated VCEO, VEB=1.5V 0.5 mA ICEV V CE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA ICEO V CE=½Rated VCEO 1.0 mA IEBO V EB=5.0V 2.0 mA BVCEO I C=100mA, (2N6050, 2N6057) 60 V BVCEO I C=100mA, (2N6051, 2N6058) 80 V BVCEO I C=100mA, (2N6052, 2N6059) 100 V VCE(SAT) I C=6.0A, IB=24mA 2.0 V VCE(SAT) I C=12A, IB=120mA 3.0 V VBE(SAT) I C=12A, IB=120mA 4.0 V VBE(ON) V CE=3.0V, IC=6.0A 2.8 V hFE V CE=3.0V, IC=6.0A 750 18K hFE V CE=3.0V, IC=12A 100 hfe V CE=3.0V, IC=5.0A, f=1.0kHz 300 fT V CE=3.0V, IC=5.0A, f=1.0MHz 4.0 MHz Cob V CB=10V, IE=0, f=100kHz (PNP types) 500 pF Cob V CB=10V, IE=0, f=100kHz (NPN types) 300 pF 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE R1 (18-September 2012) www.centralsemi.com

TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER www.centralsemi.com R1 (18-September 2012)