Download PDF2N6050 NJSEMI
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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - hFE = 3500(typ)<&lc MAXIMUM RATINGS Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous -Peak Base Current Total Power Dissipation©^ 25°C Derated above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO "no PO L -T.TO 2N6050 2N6057 2N6051 2N60S8 2N6052 2N6059 100 100 0.2 150 0.857 -65 to +200 Unit V V V A A W W/°C THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Case Symbol Rejc Max 1.17 Unit "C/W 175 150 125 100 FIGURE-1 POWER DERATING 2S 50 75 100 125 150 175 200 T0 , TEMPERATURE(« C) TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP NPN 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 DARLINGTON 12AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS
150 WATTS
PIN 1.BASE 2-EM(TTER COLLCCTOR4CASE) DM A B C E F G H I J K MILLIMETERS MIN 38.75 19.28 7.96 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67 MAX 39.96 22.23 9.28 12.18 26.67 1.09 1.62 30,40 17.30 4.36 11.18 NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice intbrmation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use, NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (T. = 25*C unless otherwise noted ) Characteristic Symbol Win Max Untt OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( I, = 100 mA, I. - 0 ) 2N6050, 2N60S7 2N6051, 2N6058 2N6052, 2N6059 Collector Cutoff Current ( Vc, = 30 V, 1, = 0 ) 2N6050, ZN6057 (Ve, = 40V, l, = 0) 2N6051.2N605S ( VCB = 50 V, 1. = 0 ) 2N6052, 2N6059 Collector Cutoff Current (VCB = Rated Vei0)ViI(^ = 1.5V) ( Vel = Rated VC10, V,^ =. 1 .5 V, Tc = 150°C ) Emitter Cutoff Current (VEB = S.OV,IC = 0) VCECMSU*) 'CEO 'CEX 'EBO 100 1.0 1.0 1.0 0.5 5.0 2.0 V mA mA mA ON CHARACTERISTICS (1) DC Current Gain (IC = 6.0AVCE = 3.0V) (IC = 12A,VCE = 3.0V) Collector-Emitter Saturation Voltage (IC = 6.0A, !B = 24mA) (IC=12A IB = 120mA) Base-Emitter On Voltage (IC = 6.0AVCE = 3.0V) Base-Emitter Saturation Voltage (IC = 12A !B=120mA) hFE VCE(»,, VBE(on) VBE(»«, 750 100 18000 2.0 3.0 2.8 4.0 V V V DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) ( lc = 5.0 A VCE = 3.0 V, f = 1 .0 MHz ) Small-Signal Current Gain { lc = 5.0 A VCE a 3.0 V, f = 1.0 KHZ ) 4.0 300 MHz (1) Pulse Test: Pulse width 5 300 us , Duty Cycle £ 2.0%