2N6050_12 COMSET

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PNP 2N6050 – 2N6051 – 2N6052 17/10/2012 COMSET SEMICONDUCTORS 1 | 3 PPOOWWEERR CCOOMMPPLLEEMMEENNTTAARRYY SSIILLIICCOONN TTRRAANNSSIISSTTOORRSS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage I E=0 2N6050 -60 V 2N6051 -80 2N6052 -100 VCEO Collector-EmitterVoltage I B=0 2N6050 -60 V 2N6051 -80 2N6052 -100 VCEX Collector-EmitterVoltage V BE= 1.5 V 2N6050 -60 V 2N6051 -80 2N6052 -100 VEBO Emitter-Base Voltage I C=0 -5.0 V IC Collector Current -12 A ICM Collector Peak Current -20 A IB Base Current -200 mA PT Power Dissipation @ T C < 25° 150 W TJ Junction Temperature 200 °C Ts Storage Temperature -65 to +200 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W

PNP 2N6050 – 2N6051 – 2N6052 17/10/2012 COMSET SEMICONDUCTORS 2 | 3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ MAx Unit ICEX Collector Cutoff Current VCE= VCEX =-60 V, VBE=1.5 V 2N6050 - - -500 µA VCE= VCEX =-80 V, VBE=1.5 V 2N6051 - - VCE= VCEX =-100 V VBE=1.5 V 2N6052 - - VCE= VCEX =-60 V, VBE=1.5 V TC=150°C 2N6050 - - -5 mA VCE= VCEX =-80 V, VBE=1.5 V TC=150°C 2N6051 - - VCE= VCEX =-100 V VBE=1.5 V, TC=150°C 2N6052 - - ICEO Collector Cutoff Current VCE=-30 Vdc, IB=0 2N6050 - - -1.0 mA VCE=-40 Vdc, IB=0 2N6051 - - VCE=-50 Vdc, IB=0 2N6052 - - IEBO Emitter Cutoff Current VEB=-5 V 2N6050 - - -2.0 mA 2N6051 - - 2N6052 - - VCEO(SUS) Collector-Emitter Sustaining Voltage (*) I C=-0.1 A 2N6050 -60 - - V 2N6051 -80 - - 2N6052 -100 - - VCE(SAT) Collector-Emitter saturation Voltage (*) I C=-6 A, IB=-24 mA 2N6050 - - -2.0 V 2N6051 2N6052 IC=-12 A, IB=-120 mA 2N6050 - - -3.0 2N6051 2N6052 VBE(SAT) Base-Emitter Saturation Voltage (*) I C=-12 A, IB=-120 mA 2N6050 - - -4 V 2N6051 2N6052 VBE(ON) Base-Emitter Voltage (*) IC=-6 A, VCE=-3 V 2N6050 - - -2.8 V 2N6051 2N6052 fT Transition Frequency IC=-5 A, VCE=-3 V, f=1 MHz 2N6050 4 - - MHz 2N6051 2N6052 hFE DC Current Gain (*) VCE=-3 V, IC=-6.0 A 2N6050 750 - 18000 - 2N6051 2N6052 VCE=-3.0 V, IC=-12 A 2N6050 100 - - 2N6051 2N6052 (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

PNP 2N6050 – 2N6051 – 2N6052 17/10/2012 COMSET SEMICONDUCTORS 3 | 3 MECHANICAL DATA CASE TO-3 Revised September 2012 Information furnished is believed to be accurate and reliable. Ho wever, Comset Semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. Da ta are subject to change without notice. Comset Se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. Comset Semicon ductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com info@comsetsemi.com DIMENSIONS (mm) min max A 11 13.10 B 0.97 1.15 C 1.5 1.65 D 8.32 8.92 F 19 20 G 10.70 11.1 N 16.50 17.20 P 25 26 R 4 4.09 U 38.50 39.30 V 30 30.30 Pin 1 : Base Pin 2 : Emitter Case : Collector