2N6051 MICROSEMI

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PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 2N6052 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6051 2N6052 Unit Collector - Emitter Voltage V CEO 80 100 Vdc Col lector - Base Voltage V CBO 80 100 Vdc Emitter - Base Voltage V EBO 5.0 Vdc Base Current IB 0.2 Adc Collector Current IC 12 Adc Total Power Dissipation (1) @ T C = +25 0 C @ T C = +100 0 C P T 150 W W Operating & Storage Junction Temperature Range T op , T stg - 55 to +175 0 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction - to - Case R θJC 1.0 0 C/W 1) Derate linearly at 1.0 W/ 0 C above T C > +25 0 C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage I C = 100 mAdc 2N6051 2N6052 V (BR) CEO 100 Vdc Collector - Emitter Cutoff Current V CE = 40 Vdc 2N6051 V CE = 50 Vdc 2N6052 ICEO 1.0 1.0 mAdc Collector - Emitter Cutoff Current V CE = 80 Vdc, V BE = 1.5 Vdc 2N6051 V CE = 100 Vdc, V BE = 1.5 Vdc 2N6052 ICEX 0.5 0.5 mAdc Emitter - Base Cutoff Current V EB = 5.0 Vdc IEBO 2.0 mAdc

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2N6051, 2N6052 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward - Current Transfer Ratio I C = 1.0 Adc, V CE = 3.0 Vdc I C = 6.0 Adc, V CE = 3.0 Vdc I C = 12 Adc, V CE = 3.0 Vdc h FE 1,000 1,000 150 18,000 Collector - Emitter Saturation Voltage I C = 12 Adc, I B = 120 mAdc I C = 6.0 Adc, I B = 24 mAdc V CE(sat) 3.0 2.0 Vdc Base - Emitter Saturation Voltage I C = 12 Adc, I B = 120 mAdc V BE(sat) 4.0 Vdc Base - Emitter Voltage I C = 6.0 Adc, V CE = 3.0 Vdc V BE 2.8 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 5.0 Adc, V CE = 3.0 Vdc, f = 1.0 MHz h fe  250 Small - Signal Short - Circuit Forward Current Transfer Ratio I C = 5.0 Adc, V CE = 3.0 Vdc, f = 1.0 kHz h fe 1,000 Output Capacitance V CB = 10 Vd c, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz C obo 300 pF SWITCHING CHARACTERISTICS Turn - On Time V CC = 30 Vdc; I C = 5.0 Adc; I B = 20 mAdc ton 2.0 µs Turn - Off Time V CC = 30 Vdc; I C = 5.0 Adc; I B1 = IB2 = 20 mAdc toff µs SAFE OPERATING AREA DC Tests T C = +25 0 C + 10 0 C - 0 0 , 1 Cycle, t ≥ 1.0 s Test 1 V CE = 12.5 Vdc, I C = 12 Adc All Types Test 2 V CE = 30 Vdc, I C = 5.0 Adc All Types Test 3 V CE = 70 Vdc, I C = 200 mAdc 2N6051 V CE = 90 Vdc, I C = 155 mAdc 2N6052 (2) Pulse Test: Pulse Widt h = 300 µs, Duty Cycle ≤ 2.0%. 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 120101 Page 2 of 2